WSe2/MoS2 van der Waals Heterostructures Decorated with Au Nanoparticles for Broadband Plasmonic Photodetectors

被引:24
|
作者
Guo, Junxiong [1 ]
Lin, Lin [1 ,2 ]
Li, Shangdong [3 ]
Chen, Jianbo [1 ,4 ]
Wang, Shicai [2 ]
Wu, Wanjing [1 ]
Cai, Ji [1 ]
Liu, Yu [5 ]
Ye, Jinghua [1 ]
Huang, Wen [2 ]
机构
[1] Chengdu Univ, Sch Elect Informat & Elect Engn, Chengdu 610106, Peoples R China
[2] Univ Elect Sci & Technol China, Yangtze Delta Reg Inst Huzhou, Huzhou 313001, Peoples R China
[3] Sun Yat Sen Univ, Sch Elect & Informat Technol, Sch Microelect, Guangzhou 510006, Peoples R China
[4] Sichuan Univ, Coll Mat Sci & Engn, Chengdu 610064, Peoples R China
[5] Tsinghua Univ, Sch Integrated Circuits, Beijing 100084, Peoples R China
基金
中国国家自然科学基金;
关键词
broadband photodetector; MoS2; WSe2; plasmonic; Au nanoparticles; van der Waals heterostructure; TRANSITION-METAL DICHALCOGENIDES; SINGLE-LAYER; MOS2; GENERATION; GRAPHENE;
D O I
10.1021/acsanm.1c03386
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Surface plasmons of metal nanostructures can resonantly enhance the light absorption of two-dimensional (2D) materials and stacked van der Waals (vdW) heterostructure-based photodetectors, realizing the improvement of responsivity. So far, it has remained challenging to control and tune surface plasmons via artificially varying the geometry of arrayed metal nanostructures. Here, we demonstrate a broadband plasmonic photodetector based on an integration of gold nanoparticles (Au NPs) on a WSe2/MoS2 vdW heterostructure. The plasmon resonance peaks could be tuned by the artificially patterning of Au NPs with the geometry controlled by a rapid thermal processing technique and enable a great improvement of light absorption crossing broadband spectral regimes from 400 to 1100 nm. Our device operates at room temperature and exhibits the highest responsivity of up to 1948 mA W-1, detectivity of 7.2 x 10(11) cm Hz(1/2) W-1, and the ultrafast response of 8.3 mu s under an illumination with zero-bias voltage. These merits of high-performance detection and rapidly scalable production of controlled metal nanostructures, with the development of 2D material synthesis and transfer techniques, offer great potential for large-area and smart fabrication of nanoscale optoelectronic devices with low power consumption.
引用
收藏
页码:587 / 596
页数:10
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