All-metal oxide transparent photodetector for broad responses

被引:28
|
作者
Abbas, Sohail [1 ,2 ]
Kim, Joondong [1 ,2 ]
机构
[1] Incheon Natl Univ, Dept Elect Engn, 119 Acad Rd Yeonsu, Incheon 22012, South Korea
[2] Incheon Natl Univ, MCIFE, PEDAL, 119 Acad Rd Yeonsu, Incheon 22012, South Korea
基金
新加坡国家研究基金会;
关键词
Transparent photodetector; Metal oxides; N-2-doping; Broad response; Self-biased; High-speed; DOPED TITANIUM-DIOXIDE; TIO2; NITROGEN; GRAPHENE; FILMS; BAND;
D O I
10.1016/j.sna.2020.111835
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
All transparent photodetector is realized by metal oxide heterojuction of p-NiO and n-TiO2. This transparent photodetector is self-operation by photovoltaic effect without an external bias. By forming the built-in potential between two metal oxide layers, spontaneously established electric field controls the carrier collections. Silver nanowires (AgNWs) were applied as a top contact and fluorine-doped tin-oxide (FTO) layer worked as a back contact. The relatively high transparency (similar to 44 %) was secured for the photodetector of AgNWs/NiO/TiO2/FTO/Glass. To realize high-performing and broad wavelength photodetection, energy band tuning was performed by N-2-doping process. The N-2-treated transparent photodetector effectively detect UV, blue and green light with a high photocurrent of 558, 171 and 66 mu A, respectively. Moreover, the photodetector achieved excellent responsivity (136 mA/W), detectivity (1.11 x 10(9) Jones), noise-equivalent power (9.2 x 10(-10) W.Hz(-1/2)) and linear-dynamic-range (34 dB). The functional doping of wide-bandgap metal-oxides modifies band energies, which suggests the high possibility of broad photodetection and improved photoelectric devices, including photovoltaics. (C) 2020 Elsevier B.V. All rights reserved.
引用
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页数:8
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