Erbium-Doped Waveguide Laser in Tantalum Pentoxide

被引：26

作者：

Subramanian, Ananth Z. ^{[1
]}

Oton, Claudio J. ^{[2
]}

Shepherd, David P. ^{[1
]}

Wilkinson, James S. ^{[1
]}

机构：

[1] Univ Southampton, Optoelect Res Ctr, Southampton SO17 1BJ, Hants, England

[2] Univ Politecn Valencia, Nanophoton Technol Ctr, Valencia 46022, Spain

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2010年 / 22卷 / 21期

关键词：

Erbium; integrated optics; laser amplifiers; optical materials; optical planar waveguide components; OPTICAL AMPLIFIERS; GLASSES; SILICON; GAIN; NM;

D O I：

10.1109/LPT.2010.2072495

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Tantalum pentoxide (Ta(2)O(5)) is a promising high index material for dense photonic circuits, with the incorporation of gain substantially increasing its potential functionality. Diode-pumped laser action is demonstrated in 2.3-cm-long Ta(2)O(5) rib waveguides doped with 2.7 x 10(20) erbium ions/cm(3), which were fabricated by magnetron sputtering on an oxidized silicon wafer. Lasing was observed at wavelengths between 1558 and 1562 nm with a launched diode pump power threshold of 14 mW.

引用

页码：1571 / 1573

页数：3

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