Erbium-Doped Waveguide Laser in Tantalum Pentoxide

被引：26
|
作者：
Subramanian, Ananth Z. [1 ]
Oton, Claudio J. [2 ]
Shepherd, David P. [1 ]
Wilkinson, James S. [1 ]
机构：
[1] Univ Southampton, Optoelect Res Ctr, Southampton SO17 1BJ, Hants, England
[2] Univ Politecn Valencia, Nanophoton Technol Ctr, Valencia 46022, Spain
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2010年 / 22卷 / 21期
关键词：
Erbium; integrated optics; laser amplifiers; optical materials; optical planar waveguide components; OPTICAL AMPLIFIERS; GLASSES; SILICON; GAIN; NM;
D O I：
10.1109/LPT.2010.2072495
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Tantalum pentoxide (Ta(2)O(5)) is a promising high index material for dense photonic circuits, with the incorporation of gain substantially increasing its potential functionality. Diode-pumped laser action is demonstrated in 2.3-cm-long Ta(2)O(5) rib waveguides doped with 2.7 x 10(20) erbium ions/cm(3), which were fabricated by magnetron sputtering on an oxidized silicon wafer. Lasing was observed at wavelengths between 1558 and 1562 nm with a launched diode pump power threshold of 14 mW.
引用
收藏
页码：1571 / 1573
页数：3
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