Sol-gel processing SrTiO3 thin films for dynamic random access memory applications

被引：0
|
作者：
Liu, QF
Li, XS
Meng, ZY
机构：
来源：
ISE 9 - 9TH INTERNATIONAL SYMPOSIUM ON ELECTRETS, PROCEEDINGS | 1996年
关键词：
D O I：
10.1109/ISE.1996.578192
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Polycrystallinic and crack-free strontium titanate (SrTiO3) thin films were deposited on silicon and quartz substrates by sol-gel technique, using strontium acetate and titanium tetrabutoxide as starting materials. As-deposited thin films were amorphous in structure, the perovskite phase was observed by X-ray diffraction analysis of the thin films heat-treated over 600 degrees C.
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页码：690 / 694
页数：5
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