We report an efficient hole injection layer (HIL) composed of MoO3-doped C-60 for organic light-emitting diodes (OLED). The structure of the OLED device is ITO/MoO3:C-60 (5 nm:5 nm)/NPB (45 nm)/Alq(3) (55 nm)/LiF (0.5 nm)/Al. Compared with normal device without a NIL. the device using MoO3-doped C-60 as HIL can significantly enhance both hole injection efficiency and electroluminescence. The power efficiency has been increased by approximately 40.7% and 41.7% at the current density of 10 mA/cm(2) and 100 mA/cm(2), respectively, for the device using MoO3-doped Cul as HIL than the control device. The cause for the enhancement was ascribed to the charge transfer complex formed by co-evaporation of MoO3 and C-60. Hole-only devices were fabricated to confirm the hole injection enhancement. Ultraviolet/visible/near-infrared absorption spectra were measured to confirm the formation of the charge transfer complex. (C) 2011 Published by Elsevier B.V.
机构:
Hebei Huaqing Optoelect Mat Co Ltd, New Chem Ind Pk Guantao Cty, Handan 057750, Peoples R ChinaHebei Univ Technol, Sch Chem Engn, Hebei Key Lab Funct Polymers, Tianjin 300401, Peoples R China
Li, Xin
Jia, Xueyi
论文数: 0引用数: 0
h-index: 0
机构:
Hebei Huaqing Optoelect Mat Co Ltd, New Chem Ind Pk Guantao Cty, Handan 057750, Peoples R ChinaHebei Univ Technol, Sch Chem Engn, Hebei Key Lab Funct Polymers, Tianjin 300401, Peoples R China
机构:
NUPT, KLOEID, Nanjing 210023, Jiangsu, Peoples R China
NUPT, IAM, Nanjing 210023, Jiangsu, Peoples R ChinaNUPT, KLOEID, Nanjing 210023, Jiangsu, Peoples R China
Zeng Wenjin
Bi Ran
论文数: 0引用数: 0
h-index: 0
机构:
NUPT, KLOEID, Nanjing 210023, Jiangsu, Peoples R China
NUPT, IAM, Nanjing 210023, Jiangsu, Peoples R ChinaNUPT, KLOEID, Nanjing 210023, Jiangsu, Peoples R China
Bi Ran
Zhang Hongmei
论文数: 0引用数: 0
h-index: 0
机构:
NUPT, KLOEID, Nanjing 210023, Jiangsu, Peoples R China
NUPT, IAM, Nanjing 210023, Jiangsu, Peoples R ChinaNUPT, KLOEID, Nanjing 210023, Jiangsu, Peoples R China
Zhang Hongmei
Huang Wei
论文数: 0引用数: 0
h-index: 0
机构:
NUPT, KLOEID, Nanjing 210023, Jiangsu, Peoples R ChinaNUPT, KLOEID, Nanjing 210023, Jiangsu, Peoples R China
机构:
Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China
Cao Jun-Song
Guan Min
论文数: 0引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China
Guan Min
Cao Guo-Hua
论文数: 0引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China
Cao Guo-Hua
Zeng Yi-Ping
论文数: 0引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China
Zeng Yi-Ping
Li Jin-Min
论文数: 0引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China
Li Jin-Min
Qin Da-Shan
论文数: 0引用数: 0
h-index: 0
机构:
Hebei Univ Technol, Inst Polymer Sci & Engn, Tianjin 300130, Peoples R ChinaChinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China
机构:
Novel Materials Laboratory,Institute of Semiconductors,Chinese Academy of SciencesNovel Materials Laboratory,Institute of Semiconductors,Chinese Academy of Sciences
曾一平
李晋闽
论文数: 0引用数: 0
h-index: 0
机构:
Novel Materials Laboratory,Institute of Semiconductors,Chinese Academy of SciencesNovel Materials Laboratory,Institute of Semiconductors,Chinese Academy of Sciences