Dumbbell stanane: a large-gap quantum spin hall insulator

被引:24
|
作者
Chen, Xin
Li, Linyang
Zhao, Mingwen [1 ]
机构
[1] Shandong Univ, Sch Phys, Jinan 250100, Shandong, Peoples R China
基金
中国国家自然科学基金;
关键词
TOPOLOGICAL INSULATORS; ELECTRON LOCALIZATION; TRANSPORT-PROPERTIES; SILICENE; GERMANENE; ELEMENTS; PREDICTION; TRANSITION; STATE; LAYER;
D O I
10.1039/c5cp00046g
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A quantum spin Hall (QSH) effect is quite promising for applications in spintronics and quantum computations, but at present, can only be achieved at ultralow temperatures. The determination of large-gap QSH insulators is critical to increase the operating temperature. By using first-principles calculations, we demonstrate that the stable hydrogenated stanene with a dumbbell-like structure (DB stanane) has large topological nontrivial band gaps of 312 meV (G point) and 160 meV for the bulk, characterized by a topological invariant of Z(2) = 1 because of s-p(xy) band inversion. Helical gapless edge states appear in the nanoribbon structures with high Fermi velocity comparable to that of graphene. The nontrivial topological states are robust against the substrate effects. The realization of this material is a feasible solution for the applications of QSH effects at room temperature and can be beneficial in the fabrication of highspeed spintronics devices.
引用
下载
收藏
页码:16624 / 16629
页数:6
相关论文
共 50 条
  • [41] Large-Gap Quantum Spin Hall States in the Bilayer Hexagonal Structure of Rhenium and Technetium Dinitrides: A First-Principles Study
    Wang, Yanli
    Ding, Yi
    JOURNAL OF PHYSICAL CHEMISTRY C, 2019, 123 (41): : 25524 - 25530
  • [42] Band inversion induced large-gap quantum spin Hall states in III-Bi-monolayer/SiO2
    Xia, Yunyouyou
    Jin, Suhua
    Hu, Jiayu
    Claessen, Ralph
    Hanke, Werner
    Thomale, Ronny
    Li, Gang
    PHYSICAL REVIEW B, 2022, 106 (16)
  • [43] Large-Gap Quantum Spin Hall State and Temperature-Induced Lifshitz Transition in Bi4Br4
    Yang, Ming
    Liu, Yundan
    Zhou, Wei
    Liu, Chen
    Mu, Dan
    Liu, Yani
    Wang, Jiaou
    Hao, Weichang
    Li, Jin
    Zhong, Jianxin
    Du, Yi
    Zhuang, Jincheng
    ACS NANO, 2022, 16 (02) : 3036 - 3044
  • [44] Prediction of large-gap quantum spin hall insulator and Rashba-Dresselhaus effect in two-dimensional g-TlA (A = N, P, As, and Sb) monolayer films
    Xinru Li
    Ying Dai
    Yandong Ma
    Wei Wei
    Lin Yu
    Baibiao Huang
    Nano Research, 2015, 8 : 2954 - 2962
  • [45] A large-gap quantum spin Hall state in exfoliated Na3Bi-like two-dimensional materials
    Jiang, Jingwen
    Guo, Xiaoqiu
    Ma, Zhuang
    Wang, Gui
    Xu, Yiguo
    Zhang, Xiuwen
    JOURNAL OF MATERIALS CHEMISTRY C, 2022, 10 (31) : 11329 - 11337
  • [46] Prediction of large-gap quantum spin hall insulator and Rashba-Dresselhaus effect in two-dimensional g-TlA (A = N, P, As, and Sb) monolayer films
    Li, Xinru
    Dai, Ying
    Ma, Yandong
    Wei, Wei
    Yu, Lin
    Huang, Baibiao
    NANO RESEARCH, 2015, 8 (09) : 2954 - 2962
  • [47] Coulomb gap in the quantum Hall insulator
    Backhaus, M
    Huckestein, B
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2001, 15 (10-11): : 1369 - 1372
  • [48] Robust large-gap quantum spin Hall states in stabilized bismuthene on Si(111)- α-√3x√3-Au
    Llona, Bheim M.
    Chou, Hsin-Lei
    Lan, Liang-Wei
    Wu, Shih-Yu
    Hsu, Chia-Hsiu
    Chuang, Feng-Chuan
    Lin, Hsin
    Kuo, Chien-Cheng
    2D MATERIALS, 2024, 11 (04):
  • [49] Quantum Hall skyrmions in a hole gas with a large spin gap
    Bryja, Leszek
    Wojs, Arkadiusz
    Potemski, Marek
    PHYSICAL REVIEW B, 2006, 73 (24)
  • [50] The quantum spin Hall insulator with large bandgap in functionalized AlBi monolayer
    Huang, Lin
    Zhang, Li
    SOLID STATE COMMUNICATIONS, 2024, 385