Improved performance of organic light-emitting devices with ultra-thin hole-blocking layers

被引:0
|
作者
Chen, B. J. [1 ]
Divayana, Y. [1 ]
Sun, X. W. [1 ]
Sarma, K. R. [2 ]
机构
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
[2] Honeywell Inc, Aerosp Elect Syst, Phoenix, AZ USA
关键词
organic electronic; organic light-emitting diodes; vacuum deposition; thin film; hole-blocking layer;
D O I
10.1889/1.2918080
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Tris-(8-hydroxyqunoline) aluminum (Alq(3))-based organic light-emitting devices (OLEDs) using different thickness of 2,9-Dimethyl-4,7-diphenyl-1,110-phenanthorline (BCP) as a hole-blocking layer inserted both in the electron- and hole-transport layers have been fabricated. The devices have a configuration of indium tin oxide (ITO)/m-MTDATA (80 nm)/BCP (X nm)/NPB (20 nm)/Alq(3) (40 nm)/BCP (X nm)/Alq(3) (60 nm)/Mg: Ag (200 nm), where m-MTDATA is 4, 4', 4 ''-Tris(N-3-methylphenyl-N-phenyl-amino) triphenylamine, which is used to improve hole injection and NPB is N,N'-Di(naphth-2-yl)-N,N'-diphenyl-benzidine. X varies between 0 and 2 nm. For a device with an optimal thickness of 1-nm BCP, the current and power efficiencies were significantly improved by 47% and 43%, respectively, compared to that of a standard device without a BCP layer. The improved efficiencies are due to a good balance between the electron and hole injection, exciton formation, and confinement within the luminescent region. Based on the optimal device mentioned above, the NPB layer thickness influences the properties of the OLEDs.
引用
收藏
页码:603 / 608
页数:6
相关论文
共 50 条
  • [41] The influence of the hole blocking layers on the electroluminescence stability of phosphorescent organic light emitting devices
    Siboni, Hossein Zamani
    Aziz, Hany
    ORGANIC ELECTRONICS, 2011, 12 (12) : 2056 - 2060
  • [42] Pure and stable white organic light-emitting device with an ultra-thin layer
    HAO Jingang & DENG Zhenbo Key Laboratory of Luminescence and Optical Information
    ChineseScienceBulletin, 2006, (19) : 2301 - 2303
  • [43] Pure and stable white organic light-emitting device with an ultra-thin layer
    Hao Jingang
    Deng Zhenbo
    CHINESE SCIENCE BULLETIN, 2006, 51 (19): : 2301 - 2303
  • [44] Numerical simulation of top-emitting organic light-emitting diodes with electron and hole blocking layers
    Chang, Shu-Hsuan
    Yang, Cheng-Hong
    ORGANIC LIGHT EMITTING MATERIALS AND DEVICES XI, 2007, 6655
  • [45] Effects of emitting and hole transporting layers on the performance of white organic light-emitting divice
    Wang Yu
    Hua Yu-Lin
    Wu Xiao-Ming
    Zhang Guo-Hui
    Hui Juan-Li
    ACTA PHYSICA SINICA, 2007, 56 (12) : 7213 - 7218
  • [46] Enhanced Electroluminescence Efficiency of Phosphorescent Organic Light-Emitting Diodes by Controlling the Triplet Energy of the Hole-Blocking Layer
    Park, Young Wook
    Kim, Young Min
    Choi, Jin Hwan
    Park, Tae Hyun
    Jeong, Jin-Wook
    Choi, Hyun Ju
    Ju, Byeong Kwon
    IEEE ELECTRON DEVICE LETTERS, 2010, 31 (05) : 452 - 454
  • [47] Ultra-thin silver oxide/silver transparent anodes for high-efficiency organic light-emitting devices
    Chen, Ning
    Xu, Huiwen
    Jiang, Xinyan
    Li, Jianghong
    Wu, Qihui
    Yang, Huishan
    Wu, Zhijun
    APPLIED SURFACE SCIENCE, 2022, 603
  • [48] Light-emitting transistor based on ultra-thin silicon
    Saito, S.
    Hisamoto, D.
    Shimizu, H.
    Hamamura, H.
    Tsuchiya, R.
    Matsui, Y.
    Mine, T.
    Arai, T.
    Sugii, N.
    Torii, K.
    Kimura, S.
    Onai, T.
    2007 4TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS, 2007, : 256 - 258
  • [49] Improving the color purity and efficiency of blue organic light-emitting diodes (BOLED) by adding hole-blocking layer
    Huang, C. J.
    Kang, C. C.
    Lee, T. C.
    Chen, W. R.
    Meen, T. H.
    JOURNAL OF LUMINESCENCE, 2009, 129 (11) : 1292 - 1297
  • [50] Study on characteristics of a double-conductible channel organic thin-film transistor with an ultra-thin hole-blocking layer
    袁广才
    徐征
    赵谡玲
    张福俊
    许娜
    田雪雁
    徐叙瑢
    Chinese Physics B, 2009, (09) : 3990 - 3994