Investigating the effect of number of metal electrodes on performance parameters of AlGaN MSM photodetectors

被引:0
|
作者
Kaur, Harpreet [1 ]
Kaur, Harsimran Jit [2 ]
Hooda, Manish Kumar [3 ]
机构
[1] Chitkara Univ, Sch Engn & Technol, Baddi, Himachal Prades, India
[2] Chitkara Univ, Inst Engn & Technol, Rajpura, Punjab, India
[3] Semicond Lab, Sas Nagar 160071, Mohali, India
关键词
Photocurrent; Number of fingers; AlGaN; Metal-semiconductor-metal; Dark current density; Optical;
D O I
10.2478/ijssis-2022-0015
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In most past studies, MSM (Metal-Semiconductor-Metal) detectors with the varying area have been investigated for varying number of fingers (metal electrodes) of equal width (W) and spacing (S). Therefore, there is a need to investigate fixed area MSM detectors with varying number of fingers as there are few reports on electrical analysis of larger electrode spacing dimensions. In the current work effect of variation in the number of fingers is studied for two types of Al0.5Ga0.5N/AlN/Sapphire based fixed area MSM detectors. Comparative performance analysis between (S = W) and (S = 2W) based detectors is carried out for photocurrent, dark current density and transient response. I-V characteristics, structure diagram plots are generated using the TOAD Silvaco simulator. It has been observed that S = W detectors exhibit higher photocurrent and lower dark current density is shown by S = 2W designs. Therefore, simulation outcomes can be beneficial for selecting suitable MSM detector for reliable, high-speed optical communication and switching applications.
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页数:10
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