Enhanced performance of high Al-content AlGaN MSM photodetectors by electrode modification using hexadecanethiol

被引：19
|
作者：
Li, Yuhang [1 ]
Liu, Yushen [2 ]
Yang, Guofeng [1 ]
Bian, Baoan [1 ]
Wang, Jin [3 ,4 ]
Gu, Yan [1 ,5 ]
Fan, Qigao [5 ]
Ding, Yu [1 ]
Zhang, Xiumei [1 ]
Lu, Naiyan [1 ]
Chen, Guoqing [1 ]
机构：
[1] Jiangnan Univ, Sch Sci, Jiangsu Prov Res Ctr Light Ind Optoelect Engn & T, Wuxi 214122, Jiangsu, Peoples R China
[2] Changshu Inst Technol, Sch Elect & Informat Engn, Changshu 215556, Jiangsu, Peoples R China
[3] Nanjing Univ Posts & Telecommun, Coll Elect & Opt Engn, Nanjing 210023, Peoples R China
[4] Nanjing Univ Posts & Telecommun, Coll Microelect, Nanjing 210023, Peoples R China
[5] Jiangnan Univ, Sch Internet Things Engn, Wuxi 214122, Jiangsu, Peoples R China
来源：
OPTICS EXPRESS | 2021年 / 29卷 / 04期
基金：
中国国家自然科学基金;
关键词：
ULTRAVIOLET PHOTODETECTORS; UV PHOTODETECTORS; GAN; DIODES; BIAS;
D O I：
10.1364/OE.418421
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
A metal electrode modification process for AlGaN-based metal-semiconductor-metal (MSM) photodetectors have been introduced to enhance the response of solar-blind ultraviolet (UV) light detection. The hexadecanethiol organic molecules are chemically adsorbed on the electrodes of high-Al-content Al0.6Ga0.4N MSM solar-blind UV photodetectors, which can reduce the work function of the metal electrode and change the height of the Schottky barrier. This modification process significantly increases the photocurrent and responsivity of the device compared with the referential photodetector without modification. Additionally, the adverse effects caused by the surface state and polarization of the AlGaN materials are effectively reduced, which can be beneficial for improving the electrical performances of III-nitride-based UV photodetectors. (c) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
引用
收藏
页码：5466 / 5474
页数：9
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