An InP-based quantum-dot tunable three-section distributed Bragg reflector laser

被引：2
|
作者：
Robbins, D. J. [1 ]
Duck, J. P. [1 ]
Whitbread, N. D. [1 ]
Ward, A. J. [1 ]
Rousseau, B. [2 ]
Lelarge, F. [2 ]
机构：
[1] Bookham Technol PLC, Towcester NN12 8EQ, Northants, England
[2] Alcatel Thales 3 5 Lab, F-91460 Marcoussis, France
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2008年 / 20卷 / 1-4期
关键词：
laser tuning; quantum dots (QDs); semiconductor lasers;
D O I：
10.1109/LPT.2007.912520
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A three-section distributed Bragg reflector (DBR) laser operating in the 1550-nm band is reported, based on a quantum-dot gain medium. The device is fabricated using a standard production, full wafer process to achieve a valid comparison with quantum-well-based DBR lasers. A tuning range of 8 nm and a maximum output power of 20 mW are achieved.
引用
收藏
页码：147 / 149
页数：3
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