Revealing and reducing the possible recombination loss within TiO2 compact layer by incorporating MgO layer in perovskite solar cells

被引：49

作者：

Kulkarni, Ashish ^{[1
]}

Jena, Ajay K. ^{[1
]}

Chen, Hsin-Wei ^{[1
]}

Sanehira, Yoshitaka ^{[1
]}

Ikegami, Masashi ^{[1
]}

Miyasaka, Tsutomu ^{[1
]}

机构：

[1] Toin Univ Yokohama, Aoba Ku, 1614 Kurogane Cho, Yokohama, Kanagawa 2258503, Japan

来源：

SOLAR ENERGY | 2016年 / 136卷

基金：

日本科学技术振兴机构;

关键词：

Perovskite solar cells; MgO thin layer; TiO2 compact layer; TiO2-MgO bilayer; FTO/TiO2 interface recombination; ELECTRON; HYSTERESIS; HALIDE; HOLE; INTERFACE; EFFICIENT; LENGTHS;

D O I：

10.1016/j.solener.2016.07.019

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Here, we report an origin of loss in open circuit voltage (Vac) in perovskite solar cells due to the possible trap-assisted recombination within the widely used TiO2 compact layer (CL) and at its interface with FTO substrate. A thin layer (TL) of MgO was employed to investigate the recombination mechanism. MgO in place of TiO2 CL (50-60 nm) enhances V-oc of the cell significantly while the MgO layer coated on TiO2 CL (TiO2-MgO bilayer) does not change the V-oc much. In combination with open-circuit voltage decay (OCVD) measurements, we reveal that recombination at FTO/TiO2 interface is a major factor regulating the voltage and efficiency of TiO2-based perovskite solar cells. (C) 2016 Elsevier Ltd. All rights reserved.

引用

页码：379 / 384

页数：6

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