Revealing and reducing the possible recombination loss within TiO2 compact layer by incorporating MgO layer in perovskite solar cells

被引:49
|
作者
Kulkarni, Ashish [1 ]
Jena, Ajay K. [1 ]
Chen, Hsin-Wei [1 ]
Sanehira, Yoshitaka [1 ]
Ikegami, Masashi [1 ]
Miyasaka, Tsutomu [1 ]
机构
[1] Toin Univ Yokohama, Aoba Ku, 1614 Kurogane Cho, Yokohama, Kanagawa 2258503, Japan
基金
日本科学技术振兴机构;
关键词
Perovskite solar cells; MgO thin layer; TiO2 compact layer; TiO2-MgO bilayer; FTO/TiO2 interface recombination; ELECTRON; HYSTERESIS; HALIDE; HOLE; INTERFACE; EFFICIENT; LENGTHS;
D O I
10.1016/j.solener.2016.07.019
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Here, we report an origin of loss in open circuit voltage (Vac) in perovskite solar cells due to the possible trap-assisted recombination within the widely used TiO2 compact layer (CL) and at its interface with FTO substrate. A thin layer (TL) of MgO was employed to investigate the recombination mechanism. MgO in place of TiO2 CL (50-60 nm) enhances V-oc of the cell significantly while the MgO layer coated on TiO2 CL (TiO2-MgO bilayer) does not change the V-oc much. In combination with open-circuit voltage decay (OCVD) measurements, we reveal that recombination at FTO/TiO2 interface is a major factor regulating the voltage and efficiency of TiO2-based perovskite solar cells. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码:379 / 384
页数:6
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