Study of optoelectronic properties of thin MoOx films for application in silicon solar cells.

被引：0
|
作者：
Dominguez, A. [1 ]
De Melo, O. [2 ]
Dutt, A. [1 ]
Santana, G. [1 ]
机构：
[1] Univ Nacl Autonoma Mexico, Inst Invest Mat, Dept Mat Baja Dimensionalidad, Circuito Exterior S-N,CU,AP 70-360, Mexico City 04510, DF, Mexico
[2] Univ la Habana, Fac Fis, Havana 10400, Cuba
来源：
2019 IEEE 46TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2019年
关键词：
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
In this work, a study is made on the optoelectronic properties of thin MoOx films, with 2 < x < 3. To do this, thin MoOx films were grown with approximate thicknesses of 10, 15 and 20nm by sputtering, which were deposited on glass, and Si-n / p wafers with the aim of subjecting them to different characterization techniques. It is observed that the obtained MoOx films can form a p-n junction if deposited on a Si-n wafer or behave as a hole-extracting layer if deposited on Si-p and the above-mentioned properties shown a substantial improvement after a thermal treatment at 200 degrees C in high vacuum for 30 minutes.
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页码：2655 / 2658
页数：4
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