SiN passivation layer effects on un-gated two-dimensional electron gas density in AlGaN/AlN/GaN field-effect transistors

被引：12

作者：

Asgari, A. ^{[1
,2
]}

Faraone, L. ^{[2
]}

机构：

[1] Univ Tabriz, Res Inst Appl Phys & Astron, Tabriz 51665163, Iran

[2] Univ Western Australia, Sch Elect Elect & Comp Engn, Crawley, WA 6009, Australia

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 12期

关键词：

aluminium compounds; field effect transistors; gallium compounds; III-V semiconductors; passivation; semiconductor heterojunctions; silicon compounds; two-dimensional electron gas; HETEROSTRUCTURES;

D O I：

10.1063/1.3696641

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, we present a study of SiN passivation layer effects on the two-dimensional electron gas (2DEG) sheet density in unintentionally doped AlGaN/AlN/GaN heterostructures, using a polarization model based on interface charges and a fully numerical calculation. The analysis of our results clearly indicates that there are at least two occupied sub-bands in the 2DEG for passivated AlGaN/AlN/GaN heterostructures, and with increasing passivation layer thickness and AlN interlayer thickness the 2DEG density increases. The comparison of our calculated results with published experimental data is shown to be in a very good agreement. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3696641]

引用

页数：3

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