Energy relaxation of electrons in InAs/GaAs quantum dot molecules

被引：33
|
作者：
Ortner, G [1 ]
Oulton, R
Kurtze, H
Schwab, M
Yakovlev, DR
Bayer, M
Fafard, S
Wasilewski, Z
Hawrylak, P
机构：
[1] Univ Dortmund, D-44221 Dortmund, Germany
[2] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
来源：
PHYSICAL REVIEW B | 2005年 / 72卷 / 16期
关键词：
D O I：
10.1103/PhysRevB.72.165353
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The photoluminescence emission intensities of the exciton states in InAs/GaAs coupled quantum dots are studied with regard to the tunneling-induced dependence on splitting energy. Even at very low excitation, emission from bonding and antibonding states is observed, as long as the splitting ranges between a few and similar to 30 meV. As the splitting is dominated by the conduction band states, this demonstrates an acoustic-phonon relaxation bottleneck for electrons. For larger splittings, only bonding state emission is observed at low excitation, indicating fast carrier relaxation, which is most likely caused by a combination of electron-hole scattering and polaron formation.
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页数：6
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