Over rail-to-rail fully differential voltage-to-current converters for nm scale CMOS technology

被引：6

作者：

Handkiewicz, Andrzej ^{[1
]}

Szczesny, Szymon ^{[2
]}

Kropidlowski, Marek ^{[2
]}

机构：

[1] AJP, Tech Fac, Ul F Chopina 52, PL-66400 Gorzow Wielkopolski, Poland

[2] Poznan Univ Tech, Fac Comp, Ul Piotrowo 3a, PL-60965 Poznan, Poland

来源：

ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING | 2018年 / 94卷 / 01期

关键词：

Voltage-to-current converters; Low power circuits; Analog circuit design; Standard digital CMOS technology; SI-STUDIO; TRANSCONDUCTOR; SENSITIVITY; CIRCUITS; SYSTEMS;

D O I：

10.1007/s10470-017-1071-7

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The converters presented in this paper are based on long channel complementary MOS transistors, instead of the commonly used differential amplifiers or differential transistor pairs which are difficult to implement in low voltage, nm scale CMOS technology. Nonlinearities of drain currents can be cancelled in the fully differential structure. As a result, the low power, nanometre standard digital CMOS technology converters are obtained. Layout examples are designed in 65 nm TSMC technology. Post-layout simulations show that the range of input voltage over rail-to-rail is achieved with very good linearity and reduced harmonic distortion.

引用

页码：139 / 146

页数：8

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