Impact of High-K Gate Dielectric Materials on Uniformly Doped Dual Gate FinFET for Analog and Digital Applications

As the technology is scaled down, there is a need to find the alternatives for the Silicon dioxide materials. The high-K gate dielectric materials are one of such kind in nanoscale devices. In this paper, an attempt is made to study the electrical behavior, analog, and digital performance of dual-gate FinFET using different high-K gate dielectric materials (Silicon dioxide, Hafnium oxide, Titanium oxide) in 5 nm technology using ATLAS 2D simulation. The results describe how high-K gate dielectric materials influence the device in terms of performance enhancement. The main idea behind this study is to give an insight into the device for the improved performance parameters. The ON current (I-ON), OFF current (I-OFF), transconductance (g(m)), Drain conductance (g(ds)), On Resistance (R-ON), Transconductance efficiency (TF), Early voltage (EV), V-IL, V-IH, NML, NMH are the main Figure of merits (FOMs). The performance improvement is observed for proposed Dual gate FinFET for HfO2 dielectric material. The performace parameters like I-ON (21.59 mA), I-OFF (21 mu A), Maximum net Electric field (1,221,290 V/cm), g(m(max)) (0.05187 S), g(ds(max)) (0.03462 S), R-ON(max) (25.93 K omega), TFmax (5.02), Gain(max) (90.233), EVmax (67.532 V), V-IL (0.21 V), V-IH (0.4 V), NML (198 V) and NMH (600 V) are obtained. This paper gives an opportunity to attain high performance with the proposed device using HfO2 dielectric material.