Strain relaxation behavior of the InGaN/GaN multiple quantum wells observed by transmission electron microscopy

被引：14
|
作者：
Cho, HK
Lee, JY
Leem, JY
机构：
[1] Dong A Univ, Dept Met Engn, Pusan 604714, South Korea
[2] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
[3] Inje Univ, Dept Opt Engn, Pusan 621749, South Korea
来源：
APPLIED SURFACE SCIENCE | 2004年 / 221卷 / 1-4期
关键词：
MQW; transmission electron microscopy; strain relaxation;
D O I：
10.1016/S0169-4332(03)00884-5
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We have investigated the strain relaxation behavior of InGaN/GaN multiple quantum wells (MQWs) with high indium composition using transmission electron microscopy (TEM). We found that the position of the main emission peak in the MQWs with indium content of more than the critical composition is significantly affected by the increase in the number of quantum wells (QWs). From high-resolution TEM (HRTEM) and energy dispersive X-ray spectroscopy (EDX), the redshift by the increase of QW numbers originates from the increase of indium segregation in the MQWs, and dislocations and stacking faults may enhance the formation of the indium segregation. (C) 2003 Elsevier B.V. All rights reserved.
引用
下载
收藏
页码：288 / 292
页数：5
相关论文
共 50 条
  • [1] Slow spin relaxation observed in InGaN/GaN multiple quantum wells
    Julier, M
    Vinattieri, A
    Colocci, M
    Lefebvre, P
    Gil, B
    Scalbert, D
    Tran, CA
    Karlicek, RF
    Lascaray, JP
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1999, 216 (01): : 341 - 345
  • [2] Interactions between inversion domains and InGaN/GaN multiple quantum wells investigated by transmission electron microscopy
    Li, HD
    Wang, T
    Jiang, N
    Liu, YH
    Bai, J
    Sakai, S
    JOURNAL OF CRYSTAL GROWTH, 2003, 247 (1-2) : 28 - 34
  • [3] Electron microscopy investigations of V defects in multiple InGaN/GaN quantum wells and InGaN quantum dots
    Yang, J. R.
    Li, W. C.
    Tsai, H. L.
    Hsu, J. T.
    Shiojiri, M.
    JOURNAL OF MICROSCOPY, 2010, 237 (03) : 275 - 281
  • [4] Polarization relaxation in InGaN/(In)GaN multiple quantum wells
    Zhang, Feng
    Ikeda, Masao
    Zhou, Renlin
    Liu, Jianping
    Zhang, Shuming
    Tian, Aiqin
    Wen, Pengyan
    Li, Deyao
    Zhang, Liqun
    Yang, Hui
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 58 (SC)
  • [5] volution of V-defects and dislocations in InGaN/GaN multi-quantum wells observed by transmission electron microscopy
    Wang, Huanyou
    Jin, Gui
    Tan, Qiaolai
    OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2018, 12 (11-12): : 732 - 736
  • [6] Transmission electron microscopy study on pre-strained InGaN/GaN quantum wells
    Chen, Yung-Sheng
    Yao, Li-Chieh
    Lin, Yu-Li
    Hung, Ling
    Huang, Chi-Feng
    Tang, Tsung-Yi
    Huang, Jeng-Jie
    Shiao, Wen-Yu
    Yang, C. C.
    JOURNAL OF CRYSTAL GROWTH, 2006, 297 (01) : 66 - 73
  • [7] Fast spin relaxation in InGaN/GaN multiple quantum wells
    Brown, J.
    Wells, J. P. R.
    Hashemizadeh, S. A.
    Parbrook, P. J.
    Wang, T.
    Fox, A. M.
    Mowbray, D. J.
    Skolnick, M. S.
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2006, 243 (07): : 1643 - 1646
  • [8] Strain-balanced InGaN/GaN multiple quantum wells
    Van den Broeck, D. M.
    Bharrat, D.
    Hosalli, A. M.
    El-Masry, N. A.
    Bedair, S. M.
    APPLIED PHYSICS LETTERS, 2014, 105 (03)
  • [9] Electron Microscope Study of Strain in InGaN Quantum Wells in GaN Nanowires
    Geiss, R. H.
    Bertness, K. A.
    Roshko, A.
    Read, D. T.
    ELECTRON CRYSTALLOGRAPHY FOR MATERIALS RESEARCH AND QUANTITATIVE CHARACTERIZATION OF NANOSTRUCTURED MATERIALS, 2009, 1184 : 125 - 130
  • [10] Comparative characterization of InGaN/GaN multiple quantum wells by transmission electron microscopy, X-ray diffraction and rutherford backscattering
    Zhou, SQ
    Wu, MF
    Yao, SD
    Zhang, GY
    CHINESE PHYSICS LETTERS, 2005, 22 (10) : 2700 - 2703
12345