Recrystallization behavior of aluminum layers in Al/Ti/Si and Al/Ti/SiOx/Si structures

被引：0
|
作者：
Snitovsky, YP [1 ]
机构：
[1] Belarussian State Univ Informat Sci & Radioelect, Minsk 220013, BELARUS
来源：
INORGANIC MATERIALS | 2005年 / 41卷 / 08期
关键词：
D O I：
10.1007/s10789-005-0216-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The texturing of aluminum in Al/Ti bilayers on (111) Si with and without a low-temperature oxide layer is studied by electron microscopy and x-ray diffraction at different boron and phosphorus concentrations in silicon. The Al layers grown on B-doped Si are shown to have extremely smooth surfaces. The mechanism of oriented Algrowth is discussed.
引用
收藏
页码：807 / 811
页数：5
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