Development of wide range energy focused ion beam lithography system

被引:7
|
作者
Kinokuni, M
Sawaragi, H
Mimura, R
Aihara, R
Forchel, A
机构
[1] Eiko Engn Co Ltd, Hitachinaka, Ibaragi 31112, Japan
[2] Univ Wuerzburg, D-97074 Wuerzburg, Germany
来源
关键词
D O I
10.1116/1.590195
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A wide range energy focused ion beam system with post objective lens retarding and accelerating field optics has been developed. This system employs two objective lens elements in tandem. The first objective lens element (OL1) is a conventional einzel lens, the second one (OL2) is a retarding and accelerating mode immersion lens. The post objective lens retarding optics is very effective to obtain a low energy fine focused beam. While the post objective lens acceleration optics is not optically attractive, it has other merits. A very high energy ion beam, mon than 100 keV, can be obtained by relatively small apparatus. It is also possible to change the landing energy without adjustments of ion beam alignment. The optimized deflector system has been designed for the above mentioned optics. Stitching accuracies of the system were evaluated, and the measured stitching errors are 0.115 mu m (2 delta) on the X axis and 0.088 mu m (2 delta) on the Y axis. (C) 1998 American Vacuum Society.
引用
收藏
页码:2484 / 2488
页数:5
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