High throughput method for K0.5Na0.5NbO3 thin films preparation by chemical solution deposition

被引:22
|
作者
Schroeter, C.
Wessler, B.
Eng, L. M.
机构
[1] Siemens AG, D-81739 Munich, Germany
[2] Tech Univ Dresden, D-01069 Dresden, Germany
关键词
niobates; sol-gel processes; films; high throughput;
D O I
10.1016/j.jeurceramsoc.2007.02.033
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A high throughput method for synthesis and characterization of ferroelectric thin film libraries prepared by chemical solution deposition was developed. With a throughput of over 100 samples of different composition/day, it is possible to screen vast composition fields in a manageable amount of time. The method was applied to films of the binary KNbO3-NaNbO3 system. Structured Pt/SiO2/Si wafers were used as substrates. Samples of 450 mu thickness with remarkable dielectric properties and pure perovskite phases were obtained by optimizing the composition with respect to the K/Nla-ratio, and by identifying the ideal amount of alkali-metal excess added to the precursor solutions. (C) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码:3785 / 3788
页数:4
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