HAXPES of GaN film on Si with Cr Kα photons

被引：2

作者：

Vanleenhove, Anja ^{[1
]}

Zborowski, Charlotte ^{[1
]}

Vaesen, Inge ^{[1
]}

Hoflijk, Ilse ^{[1
]}

Conard, Thierry ^{[1
]}

机构：

[1] IMEC, MCACSA, Kapeldreef 75, B-3001 Leuven, Belgium

来源：

SURFACE SCIENCE SPECTRA | 2021年 / 28卷 / 01期

关键词：

GaN; HAXPES; Cr K alpha; ANGULAR-DISTRIBUTION PARAMETERS; ANALYTIC FITS;

D O I：

10.1116/6.0000888

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Gallium nitride (GaN) grown on Si by metalorganic chemical vapor deposition was analyzed using high-resolution, high-energy x-ray photoelectron spectroscopy (HAXPES). The HAXPES spectra of GaN obtained using monochromatic Cr K alpha radiation at 5414.7 eV include a survey scan (Al K alpha) and high-resolution spectra of Ga 3d, Ga 2p(3/2), Ga 3p, Ga LMM, N Is, C Is, and O Is.

引用

页数：9

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