Probing orbital ordering in LaVO3 epitaxial films by Raman scattering

被引：11
|
作者：
Vrejoiu, I. [1 ]
Himcinschi, C. [2 ]
Jin, L. [3 ]
Jia, C. -L. [3 ]
Raab, N. [4 ]
Engelmayer, J. [1 ]
Waser, R. [4 ]
Dittmann, R. [4 ]
van Loosdrecht, P. H. M. [1 ]
机构：
[1] Univ Cologne, Phys Inst, D-50937 Cologne, Germany
[2] TU Bergakad Freiberg, Inst Theoret Phys, D-09596 Freiberg, Germany
[3] Forschungszentrum Julich, Peter Grunberg Inst PGI 5, D-52425 Julich, Germany
[4] Forschungszentrum Julich, Peter Grunberg Inst PGI 7, D-52425 Julich, Germany
来源：
APL MATERIALS | 2016年 / 4卷 / 04期
关键词：
MAGNETIC-PROPERTIES; SPECTROSCOPY; LA1-XSRXVO3; TRANSITION; YVO3;
D O I：
10.1063/1.4945658
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Single crystals of Mott-Hubbard insulator LaVO3 exhibit spin and orbital ordering along with a structural change below approximate to 140 K. The occurrence of orbital ordering in epitaxial LaVO3 films has, however, been little investigated. By temperature-dependent Raman scattering spectroscopy, we probed and evidenced the transition to orbital ordering in epitaxial LaVO3 film samples fabricated by pulsed-laser deposition. This opens up the possibility to explore the influence of different epitaxial strain (compressive vs. tensile) and of epitaxy-induced distortions of oxygen octahedra on the orbital ordering, in epitaxial perovskite vanadate films. (C) 2016 Author(s).
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收藏
页数：10
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