Structural and photoelectronic properties of a-SiGe:H thin films with varied Ge prepared by PECVD

被引：0
|
作者：
Xu, Rui [2 ]
Li, Wei [1 ]
He, Jian [2 ]
Qi, Kang-Cheng [2 ]
Jiang, Ya-Dong [1 ]
机构：
[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
[2] Univ Elect Sci & Technol China, Sch Optoelect Informat, Chengdu 610054, Peoples R China
来源：
DISPLAY, SOLID-STATE LIGHTING, PHOTOVOLTAICS, AND OPTOELECTRONICS IN ENERGY III | 2011年 / 8312卷
关键词：
a-SiGe:H thin film; PECVD; structure; photoelectronic property; solar cell; AMORPHOUS-SILICON-GERMANIUM; MULTIJUNCTION SOLAR-CELLS; NANOCRYSTALLINE SILICON; OPTICAL-PROPERTIES;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Hydrogenated amorphous silicon-germanium (a-SiGe:H) alloy thin films were fabricated by conventional radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) with a gas mixture of silane (SiH4) and germane (GeH4). The structural, optical and electrical properties of the films with different gas volume fraction of germane were investigated by Raman and Fourier transform infrared (FTIR) spectroscopy, ultraviolet and visible (UV-vis) spectroscopy and I-V curves, respectively. The amorphous network and structural disorder in the a-SiGe: H thin films were evaluated by Raman spectroscopy. Meanwhile, the Si-H and Ge-H configurations of the films were investigated by FTIR spectroscopy. From UV-vis spectroscopy and I-V curves, the optical and electrical properties of the testing films could be deduced with varied germanium. It can be concluded that the structural and photoelectronic properties of a-SiGe: H thin films can be influenced apparently by varing of GeH4/(SiH4+ GeH4) ratio in PECVD process.
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页数：7
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