Properties of ultraviolet anti-Stokes photoluminescence in ZnO single crystals

被引：3
|
作者：
Fujii, Katsushi [1 ,2 ]
Goto, Takenari [2 ]
Yao, Takafumi [2 ]
机构：
[1] Univ Tokyo, Res Ctr Adv Sci & Technol, Meguro Ku, Tokyo 1538904, Japan
[2] Tohoku Univ, Interdisciplinary Res Ctr, Aoba Ku, Sendai, Miyagi 9808578, Japan
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2012年 / 209卷 / 04期
关键词：
anti-Stokes photoluminescence; intermediate states; ZnO single crystals; ABSORPTION; EXCITON; GAP;
D O I：
10.1002/pssa.201127551
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ultraviolet (UV) anti-Stokes photoluminescence (ASPL) was observed in ZnO single crystals at low temperature. The ASPL spectrum was essentially the same as the normal photoluminescence (PL) spectrum under excitation in the band to band transition. By analogy to the ASPL of GaN, a two-step two-photon absorption process is suggested to occur in ZnO. The ratio of re-excited electrons in the intermediate state is, however, smaller than that for GaN from the excitation intensity dependence of the ASPL. This difference is probably due to the carrier lifetime of the intermediate state for ZnO being shorter than that for GaN.
引用
收藏
页码：761 / 765
页数：5
相关论文
共 50 条
  • [21] Anti-Stokes photoluminescence in II-VI colloidal nanocrystals
    Rakovich, YP
    Filonovich, SA
    Gomes, MJM
    Donegan, JF
    Talapin, DV
    Rogach, AL
    Eychmüller, A
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2002, 229 (01): : 449 - 452
  • [22] Anti-Stokes photoluminescence and structural defects in CdSe/ZnSe nanostructures
    Valakh, MY
    Korsunska, NO
    Sadofyev, YG
    Strelchuk, VV
    Semenova, GN
    Borkovska, LV
    Artamonov, VV
    Vuychik, MV
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2003, 101 (1-3): : 255 - 258
  • [23] Sensitized anti-stokes luminescence centers in AgCl crystals
    Smirnov, M. S.
    Ovchinnikov, O. V.
    Latyshev, A. N.
    Smirnova, A. M.
    Novikov, P. V.
    Efimova, M. A.
    SEMICONDUCTORS, 2009, 43 (07) : 852 - 857
  • [24] Structural and photoluminescence properties of Gd implanted ZnO single crystals
    Murmu, P. P.
    Mendelsberg, R. J.
    Kennedy, J.
    Carder, D. A.
    Ruck, B. J.
    Markwitz, A.
    Reeves, R. J.
    Malar, P.
    Osipowicz, T.
    JOURNAL OF APPLIED PHYSICS, 2011, 110 (03)
  • [25] Sensitized anti-stokes luminescence centers in AgCl crystals
    M. S. Smirnov
    O. V. Ovchinnikov
    A. N. Latyshev
    A. M. Smirnova
    P. V. Novikov
    M. A. Efimova
    Semiconductors, 2009, 43 : 852 - 857
  • [26] Anti-stokes stimulated Raman scattering in photonic crystals
    Makarov, NS
    Bespalov, VG
    NONLINEAR FREQUENCY GENERATION AND CONVERSION: MATERIALS, DEVICES, AND APPLICATIONS IV, 2005, 5710 : 149 - 158
  • [27] Anti-Stokes cooling of Yb-doped KYF4 single crystals
    Volpi, A.
    Cittadino, G.
    Di Liet, A.
    Tonelli, M.
    JOURNAL OF LUMINESCENCE, 2018, 203 : 670 - 675
  • [28] Phonon-assisted ultraviolet anti-Stokes photoluminescence from GaN film grown on Si (111) substrate
    Tripathy, Suvranta K.
    Xu, Guibao
    Mu, Xiaodong
    Ding, Yujie J.
    Jamil, Muhammad
    Arif, Ronald A.
    Tansu, Nelson
    Khurgin, Jacob B.
    APPLIED PHYSICS LETTERS, 2008, 93 (20)
  • [29] VACUUM ULTRAVIOLET ANTI-STOKES RAMAN LASER WITH ATOMIC SELENIUM
    LUDEWIGT, K
    SCHMIDT, H
    DIERKING, R
    WELLEGEHAUSEN, B
    OPTICS LETTERS, 1985, 10 (12) : 606 - 608
  • [30] Anti-Stokes luminescence of ZnO powder under picosecond excitation
    M. A. Shevchenko
    S. F. Umanskaya
    S. D. Abdurakhmonov
    N. V. Tcherniega
    S. S. Gras’kin
    Bulletin of the Lebedev Physics Institute, 2022, 49 : 55 - 58
12345