Properties of ultraviolet anti-Stokes photoluminescence in ZnO single crystals

被引：3
|
作者：
Fujii, Katsushi [1 ,2 ]
Goto, Takenari [2 ]
Yao, Takafumi [2 ]
机构：
[1] Univ Tokyo, Res Ctr Adv Sci & Technol, Meguro Ku, Tokyo 1538904, Japan
[2] Tohoku Univ, Interdisciplinary Res Ctr, Aoba Ku, Sendai, Miyagi 9808578, Japan
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2012年 / 209卷 / 04期
关键词：
anti-Stokes photoluminescence; intermediate states; ZnO single crystals; ABSORPTION; EXCITON; GAP;
D O I：
10.1002/pssa.201127551
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ultraviolet (UV) anti-Stokes photoluminescence (ASPL) was observed in ZnO single crystals at low temperature. The ASPL spectrum was essentially the same as the normal photoluminescence (PL) spectrum under excitation in the band to band transition. By analogy to the ASPL of GaN, a two-step two-photon absorption process is suggested to occur in ZnO. The ratio of re-excited electrons in the intermediate state is, however, smaller than that for GaN from the excitation intensity dependence of the ASPL. This difference is probably due to the carrier lifetime of the intermediate state for ZnO being shorter than that for GaN.
引用
收藏
页码：761 / 765
页数：5
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