Electrical properties of Bi-implanted amorphous chalcogenide films

被引：6
|
作者：
Fedorenko, Yanina G. [1 ]
机构：
[1] Univ Surrey, Dept Elect Engn, Adv Technol Inst, Guildford GU2 7XH, Surrey, England
来源：
THIN SOLID FILMS | 2015年 / 589卷
基金：
英国工程与自然科学研究理事会;
关键词：
Amorphous chalcogenide; Doping; Ion implantation; CARRIER-TYPE REVERSAL; N-TYPE CONDUCTIVITY; OPTICAL-PROPERTIES; AC CONDUCTION; GLASSES; MECHANISM; STATES; SEMICONDUCTORS; DEPOSITION; GETE;
D O I：
10.1016/j.tsf.2015.05.036
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The impact of Bi implantation on the conductivity and the thermopower of GeTe, Ge-Sb-Te, and Ga-La-S films is investigated. The enhanced conductivity appears to be notably sensitive to a dose of an implant. Incorporation of Bi in amorphous chalcogenide films at doses up to 1 x 10(15) cm(-2) is seen not to change the majority carrier type and activation energy for the conduction process. Higher implantation doses may reverse the majority carrier type in the studied films. Electron conductivity was observed in GeTe films implanted with Bi at a dose of 2 x 10(16) cm(-2). These studies indicate that native coordination defects present in amorphous chalcogenide semiconductors can be deactivated by means of ion implantation. A substantial density of implantation-induced traps in the studied films and their interfaces with silicon is inferred from analysis of the space-charge-limited current and capacitance-voltage characteristics taken on Au/amorphous chalcogenide/Si structures. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码：369 / 375
页数：7
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