Distribution of gettering centres at a buried amorphous layer in silicon

被引：5

作者：

Kögler, R

Eichhorn, F

Mücklich, A

Danilin, AB

Skorupa, W

机构：

[1] Rossendorf Inc, Forschungszentrum Rossendorf EV, D-01314 Dresden, Germany

[2] Ctr Anal Subst, Moscow 103045, Russia

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1999年 / 148卷 / 1-4期

关键词：

Si; ion implantation; defects; Cu; gettering;

D O I：

10.1016/S0168-583X(98)00762-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A buried amorphous layer in Si has been investigated by means of metal gettering before and after rc crystallization. Metal impurities, especially Cu atoms. are intentionally introduced and accumulated in damaged regions of Si, The measured Cu depth distributions have been compared to the corresponding strain profiles and the microstructure of the Si lattice, The buried amorphous layer has been found to act like a diffusion barrier for the Cu atoms. Cu gettering takes place at the crystalline side of the amorphous-to-crystalline (a/c) interface, In this region a Si lattice expansion is observed. After recrystallization of the amorphous layer Cu gettering occurs as well outside of the former amorphous layer, mainly at the interfaces. The behaviour of Cu atoms in Si seems to be: correlated to the supersaturation of self-interstitials. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：334 / 339

页数：6

共 50 条

[31] Amorphous silicon sensors for oxidised porous silicon optical waveguides buried in silicon wafers
de Cesare, G
Maiello, G
Masini, G
Bondarenko, V
Ferrari, A
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1998, 227 : 1354 - 1358
[32] Apparent `gettering' of the Staebler-Wronski effect in amorphous silicon solar cells
Schropp, R.E.I.
von der Linden, M.B.
Daey Ouwens, J.
de Gooijer, H.
Solar Energy Materials and Solar Cells, 1994, 34 (1 -4 pt 1): : 455 - 463
[33] Gettering of oxygen onto buried defect layer in hydrogen implanted silicon wafers after low temperature surface saturation by oxygen and vacuum annealing
Frantzkevich, AV
Saad, AMH
Mazanik, AV
Fedotov, AK
Rau, EI
Chigir, SV
GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY, 2004, 95-96 : 571 - 576
[34] Relaxed graded SiGe donor substrates incorporating hydrogen-gettering and buried etch stop layers for strained silicon layer transfer applications
Isaacson, David M.
Pitera, Arthur J.
Fitzgerald, Eugene A.
JOURNAL OF APPLIED PHYSICS, 2007, 101 (01)
[35] Relaxed graded SiGe donor substrates incorporating hydrogen-gettering and buried etch stop layers for strained silicon layer transfer applications
Isaacson, David M.
Pitera, Arthur J.
Fitzgerald, Eugene A.
Journal of Applied Physics, 2007, 101 (01):
[36] PHOSPHORUS GETTERING AND INTRINSIC GETTERING OF NICKEL IN SILICON
OURMAZD, A
SCHROTER, W
APPLIED PHYSICS LETTERS, 1984, 45 (07) : 781 - 783
[37] A BURIED-COLLECTOR LAYER BY ARSENIC DIFFUSION FROM AN OXIDIZED ARSENIC-IMPLANTED AMORPHOUS-SILICON
TSUNODA, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (10): : L1926 - L1928
[38] Hydrogen gettering at buried defect layers in ion-implanted silicon by plasma hydrogenation and annealing
Ulyashin, A. G.
Christensen, J. S.
Svensson, B. G.
Koegler, R.
Skorupa, W.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2006, 253 (1-2): : 126 - 129
[39] Metallic impurities and their impact on the formation of internal gettering layer in silicon wafers
Jablonski, J
PROCEEDINGS OF THE SYMPOSIUM ON CRYSTALLINE DEFECTS AND CONTAMINATION: THEIR IMPACT AND CONTROL IN DEVICE MANUFACTURING II, 1997, 97 (22): : 295 - 308
[40] Innovative window layer for amorphous silicon/amorphous silicon carbide UV sensor
Caputo, D.
de Cesare, G.
Nascetti, A.
Tucci, M.
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (9-20) : 1818 - 1821

← 1 2 3 4 5 →