Distribution of gettering centres at a buried amorphous layer in silicon

被引：5
|
作者：
Kögler, R
Eichhorn, F
Mücklich, A
Danilin, AB
Skorupa, W
机构：
[1] Rossendorf Inc, Forschungszentrum Rossendorf EV, D-01314 Dresden, Germany
[2] Ctr Anal Subst, Moscow 103045, Russia
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1999年 / 148卷 / 1-4期
关键词：
Si; ion implantation; defects; Cu; gettering;
D O I：
10.1016/S0168-583X(98)00762-9
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
A buried amorphous layer in Si has been investigated by means of metal gettering before and after rc crystallization. Metal impurities, especially Cu atoms. are intentionally introduced and accumulated in damaged regions of Si, The measured Cu depth distributions have been compared to the corresponding strain profiles and the microstructure of the Si lattice, The buried amorphous layer has been found to act like a diffusion barrier for the Cu atoms. Cu gettering takes place at the crystalline side of the amorphous-to-crystalline (a/c) interface, In this region a Si lattice expansion is observed. After recrystallization of the amorphous layer Cu gettering occurs as well outside of the former amorphous layer, mainly at the interfaces. The behaviour of Cu atoms in Si seems to be: correlated to the supersaturation of self-interstitials. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：334 / 339
页数：6
相关论文
共 50 条
  • [1] Distribution of gettering centres at a buried amorphous layer in silicon
    Koegler, R.
    Eichhorn, F.
    Muecklich, A.
    Danilin, A.B.
    Skorupa, W.
    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1999, 148 (1-4): : 334 - 339
  • [2] An investigation of amorphous silicon solar cells with a gettering layer
    Luczak, K
    de Mont-Marin, GD
    Lund, CP
    Jennings, PJ
    Cornish, JCL
    PROCEEDINGS OF 3RD WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS A-C, 2003, : 1856 - 1858
  • [3] Interaction of interstitials with buried amorphous layer in silicon
    Oliviero, E.
    David, M. L.
    Fichtner, P. F. P.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 8, 2009, 6 (08): : 1969 - +
  • [4] MESOTAXY BY NICKEL DIFFUSION INTO A BURIED AMORPHOUS-SILICON LAYER
    EROKHIN, YN
    GROTZSCHEL, R
    OKTYABRSKY, SR
    ROORDA, S
    SINKE, W
    VYATKIN, AF
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1992, 12 (1-2): : 103 - 106
  • [5] Buried amorphous-layer impact on dislocation densities in silicon
    Wzorek, M.
    Katcki, J.
    Pluska, M.
    Ratajczak, J.
    Jaroszewicz, B.
    Domanski, K.
    Grabiec, P.
    JOURNAL OF MICROSCOPY-OXFORD, 2006, 224 : 104 - 107
  • [6] Fundamental modification of gate silicon dioxide layer as a result of lateral gettering of electrically active centres
    Uritsky, VY
    Borisov, SE
    Krylov, AP
    MICROELECTRONICS RELIABILITY, 2000, 40 (4-5) : 767 - 770
  • [7] IMPURITY TRAPPING AND GETTERING IN AMORPHOUS-SILICON
    COFFA, S
    POATE, JM
    JACOBSON, DC
    POLMAN, A
    APPLIED PHYSICS LETTERS, 1991, 58 (25) : 2916 - 2918
  • [8] Amorphization/recrystallization of buried amorphous silicon layer induced by oxygen ion implantation
    de Souza, JP
    Cima, CA
    Fichtner, PFP
    Boudinov, H
    JOURNAL OF APPLIED PHYSICS, 2004, 95 (03) : 877 - 880
  • [9] Structural analysis of buried amorphous layer in oxygen-ion-implanted silicon carbide
    Ishimaru, M
    Ohkubo, T
    Hirotsu, Y
    JOURNAL OF THE JAPAN INSTITUTE OF METALS, 2001, 65 (05) : 361 - 365
  • [10] Gettering in silicon-on-insulator wafers with polysilicon layer
    Savin, H.
    Yli-Koski, M.
    Haarahiltunen, A.
    Virkkala, V.
    Talvitie, H.
    Asghar, M. I.
    Sinkkonen, J.
    Hintsala, J.
    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2009, 159-60 : 259 - 263
12345