Growth and properties of digitally-alloyed AlGaInP by solid source molecular beam epitaxy

被引：10
|
作者：
Kwon, O [1 ]
Lin, Y [1 ]
Boeckl, J [1 ]
Ringel, SA [1 ]
机构：
[1] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2005年 / 34卷 / 10期
基金：
美国国家科学基金会;
关键词：
AlGaInP; GaInP/AlInP; short period superlattice; molecular beam epitaxy (MBE); digital alloy (DA); bandgap engineering;
D O I：
10.1007/s11664-005-0253-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Digital alloying using molecular beam epitaxy (MBE) was investigated to produce AlGaInP quaternary alloys for bandgap engineering useful in 600-nm band optoelectronic device applications. Alternating Ga0.51In0.49P/Al0.51In0.49P periodic layers ranging from 4.4 monolayers (ML) to 22.4 ML were used to generate 4,000-angstrom-thick (Al0.5Ga0.5)(0.51)In0.49P quaternary materials to understand material properties as a function of constituent superlattice layer thickness. High-resolution x-ray diffraction (XRD) analysis exhibited fine satellite peaks for all the samples confirming that digitally-alloyed (Al0.5Ga0.5)(0.51)In0.49P preserved high structural quality consistent with cross-sectional transmission electron microscopy (X-TEM) images. Low-temperature photoluminescence (PL) measurements showing a wide span of luminescence energies similar to 170 meV can be obtained from a set of identical composition digitally-alloyed (Al0.5Ga0.5)(0.51)In0.49P with different superlattice periods, indicating the bandgap tunability of this approach and its viability for III-P optoelectronic devices grown by MBE.
引用
收藏
页码：1301 / 1306
页数：6
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