Graphene growth by molecular beam epitaxy using a solid carbon source

被引：74
|
作者：
Moreau, E. [1 ]
Ferrer, F. J. [1 ]
Vignaud, D. [1 ]
Godey, S. [1 ]
Wallart, X. [1 ]
机构：
[1] CNRS, IEMN, UMR 8520, F-59652 Villeneuve Dascq, France
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2010年 / 207卷 / 02期
关键词：
GRAPHITE;
D O I：
10.1002/pssa.200982412
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The direct elaboration of graphene by molecular beam epitaxy (MBE) has been studied, using a solid carbon source. Successful growth has been achieved on both the carbon and silicon terminated faces of silicon carbide substrates in the temperature range 1000-1100 degrees C, as confirmed by low energy electron diffraction (LEED) and X-ray photoemission spectroscopy (XPS) analysis. Atomic force microscopy (AFM) observations show that the initial substrate structure, i.e. flat atomic terraces and half-period high steps, remains almost unaffected during the growth, contrary to what is observed following the graphitization process. (C) 2010 WILEY-VCH Veriag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：300 / 303
页数：4
相关论文
共 50 条
  • [1] Graphitic carbon growth on Si(111) using solid source molecular beam epitaxy
    Hackley, J.
    Ali, D.
    DiPasquale, J.
    Demaree, J. D.
    Richardson, C. J. K.
    [J]. APPLIED PHYSICS LETTERS, 2009, 95 (13)
  • [2] Growth of AlPN by solid source molecular beam epitaxy
    Kawai, Tsuyoshi
    Yamane, Keisuke
    Furukawa, Yuzo
    Okada, Hiroshi
    Wakahara, Akihiro
    [J]. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2, 2011, 8 (02): : 288 - 290
  • [3] Growth of GaAsP by Solid Source Molecular Beam Epitaxy
    Jiao, Gang Cheng
    Liu, Zheng Tang
    Shi, Feng
    Zhang, Lian Dong
    Cheng, Wei
    Wang, Shu Fei
    Zhou, Yu Jian
    Miao, Zhuang
    [J]. MATERIALS SCIENCE AND NANOTECHNOLOGY I, 2013, 531-532 : 159 - +
  • [4] Carbon doping in GaAs using carbon tetrabromide in solid source molecular beam epitaxy
    Huang, QF
    Yoon, SF
    Tan, KH
    Sun, ZZ
    Zhang, R
    Jiang, J
    Lee, LH
    [J]. JOURNAL OF CRYSTAL GROWTH, 2003, 252 (1-3) : 37 - 43
  • [5] Incorporation efficiency of carbon in GaAs using carbon tetrabromide in solid source molecular beam epitaxy
    Sun, ZZ
    Yoon, SF
    Tan, KH
    Zhang, R
    Jiang, J
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (03): : 1017 - 1021
  • [6] Epitaxial Graphene Growth by Carbon Molecular Beam Epitaxy (CMBE)
    Park, Jeongho
    Mitchel, William C.
    Grazulis, Lawrence
    Smith, Howard E.
    Eyink, Kurt G.
    Boeckl, John J.
    Tomich, David H.
    Pacley, Shanee D.
    Hoelscher, John E.
    [J]. ADVANCED MATERIALS, 2010, 22 (37) : 4140 - +
  • [7] An atomic carbon source for high temperature molecular beam epitaxy of graphene
    J. D. Albar
    A. Summerfield
    T. S. Cheng
    A. Davies
    E. F. Smith
    A. N. Khlobystov
    C. J. Mellor
    T. Taniguchi
    K. Watanabe
    C. T. Foxon
    L. Eaves
    P. H. Beton
    S. V. Novikov
    [J]. Scientific Reports, 7
  • [8] An atomic carbon source for high temperature molecular beam epitaxy of graphene
    Albar, J. D.
    Summerfield, A.
    Cheng, T. S.
    Davies, A.
    Smith, E. F.
    Khlobystov, A. N.
    Mellor, C. J.
    Taniguchi, T.
    Watanabe, K.
    Foxon, C. T.
    Eaves, L.
    Beton, P. H.
    Novikov, S. V.
    [J]. SCIENTIFIC REPORTS, 2017, 7
  • [9] Growth of carbon nanotubes by gas source molecular beam epitaxy
    Wan, J
    Luo, YH
    Choi, SD
    Li, RG
    Jin, G
    Liu, JL
    Wang, KL
    [J]. JOURNAL OF APPLIED PHYSICS, 2001, 89 (03) : 1973 - 1976
  • [10] Molecular beam epitaxy of GaInNAs by using solid source arsenic
    Kitatani, T
    Kondow, M
    Tanaka, T
    [J]. JOURNAL OF CRYSTAL GROWTH, 2001, 227 : 521 - 526
12345