Vertical β-Ga2O3 Schottky barrier diodes with trench staircase field plate

被引：48

作者：

Kumar, Sandeep ^{[1
]}

Murakami, Hisashi ^{[2
]}

Kumagai, Yoshinao ^{[2
]}

Higashiwaki, Masataka ^{[1
]}

机构：

[1] Natl Inst Informat & Commun Technol, Koganei, Tokyo 1848795, Japan

[2] Tokyo Univ Agr & Technol, Dept Appl Chem, Koganei, Tokyo 1848588, Japan

来源：

APPLIED PHYSICS EXPRESS | 2022年 / 15卷 / 05期

关键词：

HVPE; trench; field plate; CMP; Schottky barrier diodes; staircase; SINGLE-CRYSTALS; BALIGAS FIGURE; MERIT;

D O I：

10.35848/1882-0786/ac620b

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This study presents vertical Ga2O3 Schottky barrier diodes (SBDs) with a staircase field plate on a deep trench filled with SiO2. It was clarified from device simulation that at high reverse voltage operation, the staircase field plate and the deep trench can effectively alleviate electric field concentration in the Ga2O3 drift layer and the SiO2 layer, respectively. The Ga2O3 SBDs successfully demonstrated superior device characteristics typified by an on-resistance of 7.6 m omega cm(2) and an off-state breakdown voltage of 1.66 kV. These results offer the availability of the trench staircase field plate as an edge termination structure for the development of Ga2O3 SBDs.

引用

页数：3

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