An 8kV Series-Connected MOSFETs Module that Requires One Single Gate Driver

被引:0
|
作者
Long, Tianjun [1 ]
Pang, Lei [1 ]
Li, Geqi [1 ]
Zhou, Chenhui [1 ]
Ye, Mingtian [1 ]
Chen, Xuanyu [1 ]
Zhang, Qiaogen [1 ]
机构
[1] Xi An Jiao Tong Univ, State Key Lab Elect Insulat & Power Equipment, Xian, Peoples R China
关键词
Series-connected MOSFETs; Single gate driver; Repetitive frequency pulse power system;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In the Traditional series-connected MOSFETs circuit, each of MOSFET requires a separate external drive circuit, and every drive circuit must be isolated from each other magnetically or optically. This results in increased circuit complexity. Furthermore, the differences of drivers in transmission delay will cause overvoltage and overheating on semiconductor devices, which will threaten the safety of the devices and the entire circuit. In order to decrease the circuit complexity of the series-connected MOSFETs module, and improve the working stability, turn-on speed and portability of it, this paper has designed a new series-connected MOSFETs structure which only requires one single external gate driver to control it. The module consists of ten 1200V SiC MOSFETs. The function of the driver is to trigger and turn off the first MOSFET, and the rest of the MOSFETs are turned on and off by the trigger capacitors. The capacitances of trigger capacitors have significant influence on synchronization of the module, which have been researched through experiments and simulations. After the synchronization was improved, performance parameters of the module can reach to the following points: repetitive frequency over 10kHz, blocking voltage over 8kV, onstate current 20A, and rise time 15ns. The module is lightweight, reliable and easy to use, and has good application in the repetitive frequency pulse power system.
引用
收藏
页码:383 / 386
页数:4
相关论文
共 50 条
  • [21] A Single Passive Gate-Driver for Series-Connected Power Devices in DC Circuit Breaker Applications
    Liu, Jian
    Ravi, Lakshmi
    Dong, Dong
    Burgos, Rolando
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2021, 36 (10) : 11031 - 11035
  • [22] A Gate Driver Circuit for Series-Connected IGBTs Based on Quasi-Active Gate Control
    Bagheri, Alireza
    Iman-Eini, Hossein
    Farhangi, Shahrokh
    IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2018, 6 (02) : 791 - 799
  • [23] Voltage Balancing Control with Active Gate Driver for Series Connected SiC MOSFETs
    Lee, Inhwan
    Yue, Lu
    Yao, Xiu
    2019 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2019, : 3235 - 3239
  • [24] Design guidelines of current source gate driver for series connected SiC MOSFETs
    Liu, Chunhui
    Zhang, Zhengda
    Liu, Yifu
    Si, Yunpeng
    Wang, Mengzhi
    Lei, Qin
    2020 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2020, : 3803 - 3810
  • [25] High Input Voltage Single-Stage Flyback Ac/Dc LED Driver Using Series-Connected MOSFETs
    Wang, Li
    Wu, Xinke
    Peng, Fang Z.
    2012 TWENTY-SEVENTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC), 2012, : 2379 - 2384
  • [26] A Cost-Effective DC Circuit Breaker With Series-Connected Power Devices Using a Single Gate Driver
    Xie, Rui
    Lin, Bin
    Xu, Ouyang
    Wang, Xiaohe
    Ren, Guohua
    Chen, Jianliang
    Xin, Zhen
    IEEE ACCESS, 2023, 11 : 80274 - 80283
  • [27] An Investigation of a Power Module for Multiple Series-Connected Si-MOSFETs Realizing Voltage Balance by a Fully Digital Active Gate Control
    Obara, Hidemine
    Abe, Seiya
    Wada, Keiji
    2022 INTERNATIONAL POWER ELECTRONICS CONFERENCE (IPEC-HIMEJI 2022- ECCE ASIA), 2022, : 2088 - 2092
  • [28] Active Gate Drive With Gate-Drain Discharge Compensation for Voltage Balancing in Series-Connected SiC MOSFETs
    Zhou, Ye
    Wang, Xu
    Xian, Liang
    Yang, Dan
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2021, 36 (05) : 5858 - 5873
  • [29] A Single Gate Driver Based Solid-State Circuit Breaker Using Series Connected SiC MOSFETs
    Ren, Yu
    Yang, Xu
    Zhang, Fan
    Wang, Fred
    Tolbert, Leon M.
    Pei, Yunqing
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2019, 34 (03) : 2002 - 2006
  • [30] Gate Driver Design Considerations for Silicon Carbide MOSFETs Including Series Connected Devices
    Hazra, Samir
    Vechalapu, Kasunaidu
    Madhusoodhanan, Sachin
    Bhattacharya, Subhashish
    Hatua, Kamalesh
    2017 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2017, : 1402 - 1409