共 50 条
- [41] HARDNESS DEPTH PROFILE OF LATTICE STRAINED CEMENTED CARBIDE MODIFIED BY HIGH-ENERGY BORON ION-IMPLANTATION NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 59 : 962 - 965
- [46] ION-IMPLANTATION AND PROTON-ENHANCED DIFFUSION IN SEMICONDUCTORS JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01): : 475 - 475
- [48] ION-IMPLANTATION AND PROTON-ENHANCED DIFFUSION IN SEMICONDUCTORS ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1975, 170 (AUG24): : 29 - 29
- [49] CORROSION STABILITY OF TIN PREPARED BY ION-IMPLANTATION AND PVD NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 (pt 2): : 467 - 471
- [50] OSCILLATOR TEMPERATURE STABILITY CHANGE INDUCED BY ION-IMPLANTATION IEEE TRANSACTIONS ON SONICS AND ULTRASONICS, 1977, 24 (02): : 124 - 125