Enhanced thermal stability of a cobalt-boron carbide nanocomposite by ion-implantation

被引:3
|
作者
da Silva, Melina [1 ]
Klement, Uta [1 ]
Hibbard, Glenn D. [2 ]
机构
[1] Chalmers, Dept Mat & Mfg Technol, SE-41296 Gothenburg, Sweden
[2] Univ Toronto, Dept Mat Sci & Engn, Toronto, ON, Canada
关键词
nanocomposite; cobalt-boron carbide; thermal stability; ion-implantation; focused ion beam;
D O I
10.3139/146.101571
中图分类号
TF [冶金工业];
学科分类号
0806 ;
摘要
A first investigation of the thermal stability in a wear resistant cobalt-boron carbide (Co-B4C) nanocomposite has been performed by the combination of calorimetry and transmission electron microscopy. The calorimetric measurements show that the thermal stability of Co-B4C is not influenced by the presence of the 10 vol.% mu m-sized boron carbide particles. However, grain growth is shifted to significantly higher temperatures during in-situ annealing (in the transmission electron microscope), and abnormal grain growth is not observed to be as extensive as in conventional nanocrystalline Co. This effect is mainly attributed to the observed implantation of Ga atoms during transmission electron microscope specimen thinning by focused ion beam. Grain boundary segregation mechanisms are discussed as possible reasons for the retarded grain growth.
引用
收藏
页码:1124 / 1130
页数:7
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