Spectroscopy of strongly localized excitons and band-gap states in semiconducting single-walled carbon nanotubes

被引:13
|
作者
Comfort, E. S. [1 ]
Jones, D. A. [1 ]
Malapanis, A. [1 ]
Robinson, Z. R. [1 ]
Fishman, M. T. [1 ]
Lee, J. U. [1 ]
机构
[1] SUNY Albany, Coll Nanoscale Sci & Engn, New York, NY 12203 USA
基金
美国国家科学基金会;
关键词
TRANSISTORS; EMISSION;
D O I
10.1103/PhysRevB.83.081401
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
It is often assumed that single-walled carbon nanotubes grown via catalytic chemical vapor deposition are free of defects, particularly when suspended over a trench. Here we show that semiconducting nanotubes grown in this manner can contain a surprisingly large number of states within the band gap. High-resolution photocurrent spectroscopy is used to probe these states in individual nanotubes. We observe a series of band-gap states in suspended nanotubes, resulting in long trapping and detrapping times. These states significantly alter the exciton spectra, resulting in a manifold of strongly localized exciton states with narrow linewidths (<1 meV at room temperature) within a broader exciton envelope.
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页数:4
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