Investigation of performance of semi-insulating GaAs detectors irradiated by high γ doses

被引：0

作者：

Necas, V ^{[1
]}

Anh, TL

Sekácová, K

Darmo, J

Dubecky, F

Perd'ochová, A

机构：

[1] Slovak Univ Technol Bratislava, Fac Elect Engn & Informat Technol, Dept Nucl Phys & Technol, SK-81219 Bratislava, Slovakia

[2] Slovak Univ Technol Bratislava, Fac Civil Engn, Dept Phys, SK-81219 Bratislava, Slovakia

[3] Slovak Acad Sci, Inst Elect Engn, SK-84239 Bratislava, Slovakia

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2001年 / 458卷 / 1-2期

关键词：

GaAs; detector; gamma-ray irradiation; gamma-doses; charge-collection efficiency;

D O I：

暂无

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We report here the preliminary results on liquid encapsulated Czochralski (LEC) semi-insulating (SI) GaAs detectors after gamma irradiation. The detectors have been irradiated with 1.17 and 1.33 MeV photons from Co-60 With doses up to 19.2 kGy. Total doses correspond to the photon flux by the order of 10(13) gamma /mm(2) incident on the device. The detectors before and after exposure to various radiation doses have been characterised. The I-V characteristics for both polarities and pulse-height spectra versus voltage applied at the temperature of 295 K using 122keV Co-57 gamma -source were measured. A significant increase of charge-collection efficiency after irradiation of detectors was observed. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：348 / 351

页数：4

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