Synthesis and Characterization of Poly(1,4-bis((E)-2-(3-dodecylthiophen-2-yl)vinyl)benzene) Derivatives

被引:12
|
作者
Lee, Min-Jung [1 ,2 ]
Kang, Moon Seong [1 ,2 ]
Shin, Min-Ki [3 ,4 ]
Park, Jong-Won [3 ,4 ]
Chung, Dae Sung [5 ]
Park, Chan Eun [5 ]
Kwon, Soon-Ki [3 ,4 ]
Kim, Yun-Hi [1 ,2 ]
机构
[1] Gyeongsang Natl Univ, Dept Chem, Jinju 660701, South Korea
[2] Gyeongsang Natl Univ, RINS, Jinju 660701, South Korea
[3] Gyeongsang Natl Univ, Sch Mat Sci & Engn, Jinju 660701, South Korea
[4] Gyeongsang Natl Univ, ERI, Jinju 660701, South Korea
[5] Pohang Univ Sci & Technol, Dept Chem Engn, Pohang 790784, South Korea
关键词
conjugated polymers; fluorescence; synthesis; FIELD-EFFECT TRANSISTORS; END-CAPPED OLIGOMERS; THIOPHENE COPOLYMERS; CHARGE-TRANSPORT; BUILDING-BLOCKS; SEMICONDUCTORS; STABILITY; POLYMERS; MORPHOLOGY; MOBILITY;
D O I
10.1002/pola.24174
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
New amorphous semiconducting copolymers, poly(9,9-dialkylfluorene)-alt-(3-dodecylthienyl-divinylbenzene-3-dodecylthienyl) derivatives (PEFTVB and POFTVB), were designed, synthesized, and characterized The structure of copolymers was confirmed by H NMR, IR, and elemental analysis The copolymers showed very good solubility in organic solvents and high thermal stability with high T-g of 178-185 degrees C The weight average molecular weight was found to be 107,900 with polydispersity of 3 14 for PEFTVB and 76,700 with that of 3 31 for POFTVB UV-vis absorption studies showed the maximum absorption at 428 nm (in solution) and 435 nm (in film) for PEFTVB and at 430 nm (in solution) and 436 nm (in film) for POFTVB Photoluminescence studies showed the emission at 498 nm (in solution) and 557 nm (in film) for PEFTVB and at 498 nm (in solution) and 536 nm (in film) for POFTVB The solution-processed thin-film transistors showed the carrier mobility of 2 x 10(-4) cm(2) V-1 s(-1) for PEFTVB-based devices and 2 x 10(-5) cm(2) V-1 s(-1) for POFTVB-based devices (C) 2010 Wiley Periodicals, Inc. J Polym Sci Part A Polym Chem 48 3942-3949, 2010
引用
收藏
页码:3942 / 3949
页数:8
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