Microstructure and electric properties of (104)/(014)-oriented Bi3.15Nd0.85Ti3O12 films on Pt (III)/Ti/SiO2/Si by sol-gel method

被引：4
|
作者：
Chen, X. Q. [1 ]
Qiao, Y.
Liu, X. L.
Lu, C. J.
Le Rhun, Gwenael
Senz, Stephan
Hesse, Dietrich
机构：
[1] Hubei Univ, Dept Phys, Wuhan 430062, Hubei, Peoples R China
[2] Jianghan Univ, Dept Phys, Wuhan 430056, Hubei, Peoples R China
[3] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany
来源：
MATERIALS LETTERS | 2007年 / 61卷 / 27期
基金：
中国国家自然科学基金;
关键词：
ferroelectrics; thin film; orientation; piezoelectricity;
D O I：
10.1016/j.matlet.2007.03.106
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
B3.15Nd0.85Ti3O12 (BNdT) thin films with predominant (104)/(014) orientation were fabricated directly on (I I I)Pt/Ti/SiO2/Si substrates through a sol-gel process. The volume fraction of (104)/(014)-oriented grains in the film was estimated to be about 65% according to X-ray pole figure. The BNdT film is dense and uniform and consists of columnar grains penetrating the whole film thickness. The (104)/(014)-oriented BNdT film capacitors showed excellent ferroelectric properties with 2P(r)=46.4 mu C/cm(2) and E-c approximate to 140 kV/m. The films also exhibit excellent piezoelectric property, with high piezoelectric coefficient d(33) approximate to 17 pm/V. (c) 2007 Published by Elsevier B.V
引用
收藏
页码：4897 / 4900
页数：4
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