Annealing behavior of defects introduced in SOI structure by arsenic ion implantation (ESR and PAS studies)

被引：6
|
作者：
Suzuki, A
Nakamura, H
Izumi, T
Onda, T
Hara, T
机构：
[1] Tokai Univ, Dept Elect, Hiratsuka, Kanagawa 25912, Japan
[2] Hosei Univ, Dept Elect & Informat, Koganei, Tokyo 184, Japan
来源：
MATERIALS CHEMISTRY AND PHYSICS | 1998年 / 54卷 / 1-3期
关键词：
electron spin resonance; silicon on insulator; amorphous; polycrystalline;
D O I：
10.1016/S0254-0584(98)00017-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Defects produced in the top Si layer of silicon on insulator by As' implantation has been investigated, using the electron spin resonance (ESR) method. We observed two kinds of ESR centers. One had a g value of 2.0054, Delta H-pp = 6.5 Oe, which originated from an Si dangling band in an amorphous layer (a-center). The other had a g value of 2.0010, Delta H-pp = 4.5 Oe, which is due to the E'-center in the SiO2 layer. The g value of the a-center shifted from 2.0054 to 2.0045 at an annealing temperature of above 700 degrees C. (C) 1998 Published by Elsevier Science S.A. All rights reserved.
引用
收藏
页码：67 / 70
页数：4
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