Large Spin Hall Angle in β-W Thin Films Grown on CoFeB without Oxygen Plasma

被引:30
|
作者
Bansal, Rajni [1 ]
Nirala, Gurudeo [1 ]
Kumar, Akash [1 ]
Chaudhary, Sujeet [1 ]
Muduli, P. K. [1 ]
机构
[1] Indian Inst Technol, Dept Phys, New Delhi 110016, India
关键词
Spintronics; spin Hall angle; tungsten thin films; spin Hall effect; TUNGSTEN; STRAIN;
D O I
10.1142/S2010324718500182
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on growth optimization and magnetodynamic properties of beta-W/Co20Fe60B20 system. We show that a relatively low growth rate of similar to 0.17 angstrom/s is essential for the stabilization of the beta-phase of tungsten. The low growth rate allows for the residual oxygen present in the chamber to get incorporated into the growing film, which helps in the stabilization of beta-phase tungsten as evidenced by X-ray diffraction and X-ray photoelectron spectroscopy. Using these optimized growth conditions, we achieved the beta phase in tungsten thin films up to a thickness of 60 nm. The ferromagnetic resonance measurements of beta-W/Co20Fe60B20 show a linear behavior of the Gilbert damping constant with the inverse of the thickness of the CoFeB layer, from which, we calculated spin mixing conductance to be (1.62 +/- 0.15) x 10(18)m(-2). Using the inverse spin Hall effect measurements, we obtained a large spin Hall angle of -0.44 +/- (0.04) in beta-W, which is achieved without using oxygen plasma during growth of tungsten.
引用
收藏
页数:7
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