CMOS-Based Biosensors with an Independent Double-Gate FinFET

被引：0

作者：

Ahn, Jae-Hyuk ^{[1
]}

Kim, Jee-Yeon ^{[1
]}

Jung, Cheulhee ^{[2
]}

Moon, Dong-Il ^{[1
]}

Choi, Sung-Jin ^{[1
]}

Kim, Chang-Hoon ^{[1
]}

Lee, Kyung-Bok ^{[3
]}

Park, Hyun Gyu ^{[2
]}

Choi, Yang-Kyu ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, EE, Seoul, South Korea

[2] Korea Adv Inst Sci & Technol, CBE, Daejeon, South Korea

[3] KBSI, Missouri, South Korea

来源：

2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2011年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel biosensor based on an independent double-gate FinFET is demonstrated for the first time. It features a silicon nanowire implemented on a bulk substrate, a floating gate for charge sensing, and a control gate for current driving. The detection of charged polymers and DNA is demonstrated for the diagnosis of breast cancer.

引用

页数：4

共 50 条

[41] A Computationally Efficient Generalized Poisson Solution for Independent Double-Gate Transistors
Sahoo, Avinash
Thakur, Pankaj Kumar
Mahapatra, Santanu
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (03) : 632 - 636
[42] Analysis of double-gate FinFET-based address decoder for radiation-induced single-event-transients
Rathod, S. S.
Saxena, A. K.
Dasgupta, S.
[J]. IET CIRCUITS DEVICES & SYSTEMS, 2012, 6 (04) : 218 - 226
[43] Impacts of Trapezoidal Fin of 20-nm Double-Gate FinFET on the Electrical Characteristics of Circuits
Ryu, Myunghwan
Kim, Youngmin
[J]. JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2015, 15 (04) : 462 - 470
[44] Modeling of Quantum Mechanical Effects in Ultra-Thin Body Nanoscale Double-Gate FinFET
Monga, Udit
Fjeldly, Tor A.
Vishvakarma, Santosh K.
[J]. 2009 2ND INTERNATIONAL WORKSHOP ON ELECTRON DEVICES AND SEMICONDUCTOR TECHNOLOGY, 2009, : 17 - +
[45] Fin-Width Effects on Characteristics of InGaAs-Based Independent Double-Gate FinFETs
Chang, Sung-Jae
Zhou, Hong
Gong, Nanbo
Kang, Dong-Min
Lim, Jong-Won
Si, Mengwei
Ye, Peide D.
Ma, T. P.
[J]. IEEE ELECTRON DEVICE LETTERS, 2017, 38 (04) : 441 - 444
[46] A new polysilicon CMOS self-aligned double-gate TFT technology
Xiong, ZB
Liu, HT
Zhu, CX
Sin, JKO
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (12) : 2629 - 2633
[47] CMOS-based sensors
Fedder, GK
[J]. 2005 IEEE SENSORS, VOLS 1 AND 2, 2005, : 125 - 128
[48] Vertical double-gate MOSFETs
Moers, J
Trellenkamp, S
Marso, M
van der Hart, A
Mantl, S
Lüth, H
Kordos, P
[J]. ASDAM 2004: THE FIFTH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS, 2004, : 215 - 218
[49] Emulating Multimemristive Behavior of Silicon Nanowire-Based Biosensors by Using CMOS-Based Implementations
Bhardwaj, Kapil
Semenov, Dmitrii
Sotner, Roman
Chen, Junrui
Carrara, Sandro
Srivastava, Mayank
[J]. IEEE SENSORS JOURNAL, 2024, 24 (06) : 8036 - 8044
[50] Semiconductors - Rushing the double-gate
Chase, BD
[J]. SCIENTIFIC AMERICAN, 1999, 280 (03) : 42 - 43

← 1 2 3 4 5 →