The impact of airborne molecular bases on DUV photoresists

被引：0
|
作者：
Ruede, D
Ercken, M
Borgers, T
机构：
[1] Extract Syst Inc, Franklin, MA 02038 USA
[2] IMEC VZW, B-3001 Louvain, Belgium
来源：
SOLID STATE TECHNOLOGY | 2001年 / 44卷 / 08期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Exhaustive examination of resist characteristics for well-known parameters such as isolated and dense feature resolution, adhesion, and etch selectivity is ongoing. Sensitivity of resists to airborne molecular bases adds yet another parameter to be characterized. in an effort to bring the latest-generation processes into production more quickly, many device manufacturers have implemented several levels of safeguards to protect resists from bases such as ammonia, NMP, and TMA. This article compares the sensitivities of four commercially available DUV resists to a number of airborne molecular bases.
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页码：63 / +
页数：5
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