Stability to moisture of hexagonal boron nitride films deposited on silicon by RF magnetron sputtering

被引：20

作者：

Quan, Haiyan ^{[1
]}

Wang, Xin ^{[1
]}

Zhang, Li ^{[1
]}

Liu, Nian ^{[1
]}

Feng, Shuang ^{[2
]}

Chen, Zhanguo ^{[1
]}

Hou, Lixin ^{[3
]}

Wang, Qi ^{[1
]}

Liu, Xiuhuan ^{[4
]}

Zhao, Jihong ^{[1
]}

Gao, Yanjun ^{[1
]}

Jia, Gang ^{[1
]}

机构：

[1] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, 2699 Qianjin St, Changchun 130012, Jilin, Peoples R China

[2] Qiqihar Univ, Sch Commun & Elect Engn, 42 Wenhua St, Qiqihar 161006, Peoples R China

[3] Jilin Agr Univ, Coll Informat & Technol, 2888 Xincheng St, Changchun 130118, Jilin, Peoples R China

[4] Jilin Univ, Coll Commun Engn, 5372 Nanhu Rd, Changchun 130012, Jilin, Peoples R China

来源：

THIN SOLID FILMS | 2017年 / 642卷

基金：

美国国家科学基金会;

关键词：

Hexagonal boron nitride; Thin films; Radio frequency magnetron sputtering; Stability to moisture; GROWTH; GRAPHENE;

D O I：

10.1016/j.tsf.2017.09.032

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We deposited hBN films on silicon substrates by RF magnetron sputtering, and investigated the stability of the hBN films to the moisture. The hBN films including a large quantity of oxygen impurities were apt to be attacked by water vapor, and the hydrolytic process of the hBN films was studied by FTIR spectra. According to the analysis of FTIR, the main reason for the hydrolysis is the existence of boron oxides in hBN films, and the result of the hydrolysis is the formation of boric acid crystals. We sintered the hBN targets at high temperature in order to prevent oxygen from entering into the hBN films. Both FTIR and XPS results show that the hBN films have a good waterproof performance after our technology improvements because of the limit to oxygen impurity. Finally, pure and stable hBN films were obtained successfully.

引用

页码：90 / 95

页数：6

共 50 条

[31] Influence of aluminum additions on phase formation in boron nitride films deposited by magnetron sputtering
[J]. Richter, F. (f.richter@physik.tu-chemnitz.de), 2009, American Institute of Physics Inc. (93):
[32] Influence of aluminum additions on phase formation in boron nitride films deposited by magnetron sputtering
Pfeifer, T
Richter, F
Welzel, T
Kupfer, H
Willich, P
[J]. JOURNAL OF APPLIED PHYSICS, 2003, 93 (04) : 2009 - 2014
[33] Boron carbide thin films deposited by tuned-substrate RF magnetron sputtering
Pascual, E
Martínez, E
Esteve, J
Lousa, A
[J]. DIAMOND AND RELATED MATERIALS, 1999, 8 (2-5) : 402 - 405
[34] Properties of carbon nitride films deposited by magnetron sputtering
Kusano, Y
Evetts, JE
Somekh, RE
Hutchings, IM
[J]. THIN SOLID FILMS, 1998, 332 (1-2) : 56 - 61
[35] Characterization of zirconia films deposited by rf magnetron sputtering
Ben Amor, S
Rogier, B
Baud, G
Jacquet, M
Nardin, M
[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1998, 57 (01): : 28 - 39
[36] Structural and Optical Investigations of Silicon Carbon Nitride Thin Films Deposited by Magnetron Sputtering
Tomasella, Eric
Spinelle, Laurent
Bousquet, Angelique
Rebib, Farida
Dubois, Marc
Eypert, Celine
Gaston, Jean Paul
Cellier, Joel
Sauvage, Thierry
[J]. PLASMA PROCESSES AND POLYMERS, 2009, 6 : S11 - S16
[37] Microstructure and properties of silicon nitride thin films deposited by reactive bias magnetron sputtering
Kim, Joo Han
Chung, Ki Woong
[J]. Journal of Applied Physics, 1998, 83 (11 pt 1):
[38] Microstructure and properties of silicon nitride thin films deposited by reactive bias magnetron sputtering
Kim, JH
Chung, KW
[J]. JOURNAL OF APPLIED PHYSICS, 1998, 83 (11) : 5831 - 5839
[39] STUDY OF HYDROGENATED AMORPHOUS-SILICON NITRIDE FILMS PREPARED BY RF MAGNETRON SPUTTERING
BANDYOPADHYAY, AK
BHATTACHARYYA, TK
BANERJEE, R
BATABYAL, AK
BARUA, AK
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1991, 52 (05): : 339 - 343
[40] Deposition of titanium nitride thin films onto Silicon by RF Reactive magnetron sputtering
Saoula, N.
Henda, K.
Kesri, R.
[J]. THIN FILMS AND POROUS MATERIALS, 2009, 609 : 117 - +

← 1 2 3 4 5 →