Scatterometry for advanced process control in semiconductor device manufacturing

被引：6

作者：

den Boef, Arie ^{[1
]}

Cramer, Hugo ^{[1
]}

Petra, Stefan ^{[1
]}

Auer, Bastiaan Onne Fagginger ^{[1
]}

Schmetz-Schagen, Jolanda ^{[1
]}

Koolen, Armand ^{[1
]}

van Loon, Olaf ^{[1
]}

de Gersem, Gudrun ^{[1
]}

Klandermans, Pieter ^{[1
]}

Bakker, Eric ^{[1
]}

机构：

[1] ASML Netherlands BV, De Run 6501, NL-5504 DR Veldhoven, Netherlands

来源：

FIFTH INTERNATIONAL CONFERENCE ON OPTICAL AND PHOTONICS ENGINEERING | 2017年 / 10449卷

关键词：

D O I：

10.1117/12.2270595

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A concise explanation of spectroscopic scatterometry is presented that is used for model-based shape metrology of etched features in the production of Memory and Logic semiconductor devices. We also present an angle-resolved scatterometry technique that can measure at high throughput on very small test targets. First measured results are shown that demonstrate the capability on 5x5 mu m(2) targets.

引用

页数：8

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