Fast AlGaN metal-semiconductor-metal photodetectors grown on Si(111)

被引：7

作者：

Pau, JL ^{[1
]}

Monroy, E ^{[1
]}

Muñoz, E ^{[1
]}

Calle, F ^{[1
]}

Sánchez-Garcia, MA ^{[1
]}

Calleja, E ^{[1
]}

机构：

[1] Univ Politecn Madrid, ETSI Telecomunicac, Dept Ingn Elect, E-28040 Madrid, Spain

来源：

ELECTRONICS LETTERS | 2001年 / 37卷 / 04期

关键词：

D O I：

10.1049/el:20010146

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Metal-semiconductor-metal photodetectors have been fabricated on AlGaN grown on Si(111) by molecular beam epitaxy for solar- blind applications. A cutoff wavelength of 290nm and an ultraviolet/visible contrast of more than three orders of magnitude are achieved. Time response measurements show fast exponential decays, with a minimum decay time or 150ns. The photodetectors present responsivities that increase with bias, reaching 15mA/W at 4V bias.

引用

页码：239 / 240

页数：2

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