High-Performance Poly-Si Thin-Film Transistors With L-Fin Channels

被引：2

作者：

Lu, Yi-Hsien ^{[1
]}

Kuo, Po-Yi ^{[1
]}

Lin, Je-Wei ^{[1
]}

Wu, Yi-Hong ^{[1
]}

Chen, Yi-Hsuan ^{[1
]}

Chao, Tien-Sheng ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 02期

关键词：

FinFETs; L-fin; multiple gate; NH3; plasma; Ni salicidation; poly-Si thin-film transistors (TFTs);

D O I：

10.1109/LED.2011.2175357

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the first time, we construct poly-Si thin-film transistors (TFTs) with novel L-shaped poly-Si fin channels (poly-Si TFTs with L-fin channels, called LFin-TFTs). The L-fin channels of LFin-TFTs are similar to the multiple-gated fin channels of FinFETs. The LFin-TFTs exhibit a low supply gate voltage (3 V), a good subthreshold swing (SS) similar to 190 mV/dec, and a high on/off current ratio (I-ON/I-OFF) > 10(6) (V-D = 1 V) without hydrogen-related plasma treatments. After Ni salicidation, the devices exhibit steep SS similar to 148 mV/dec and I-ON/I-OFF similar to 10(7). After NH3 plasma treatment, the characteristics of the devices are further improved. The LFin-TFTs have steeper SS similar to 132 mV/dec, higher I-ON/I-OFF > 10(7), and threshold voltage (V-TH) similar to 0.036 V.

引用

页码：215 / 217

页数：3

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