Influence of RF-magnetron Sputtering System Parameters on the Process of Thin Films Nanostructure Formation

被引：0
|
作者：
Goncharov, A. A. [1 ]
Yunda, A. N. [1 ]
Pogrebnjak, A. D. [1 ]
Shelest, I., V [1 ]
Buranich, V. V. [1 ]
Loboda, V. B. [2 ]
机构：
[1] Sumy State Univ, Sumy, Ukraine
[2] Sumy Natl Agr Univ, Sumy, Ukraine
来源：
PROCEEDINGS OF THE 2018 IEEE 8TH INTERNATIONAL CONFERENCE NANOMATERIALS: APPLICATION & PROPERTIES (NAP-2018) | 2018年
关键词：
RF-magnetron; sputtering; energy; substrate bias; discharge gap; nanostructure; hafnium diboride; ARGON GLOW-DISCHARGES; ION-BOMBARDMENT; SUBSTRATE;
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Effect of a radio-frequency magnetron sputtering system parameters on the process of thin films structure formation was analyzed. Dependence of energy delivered to the growing film by bombarding ions on the magnetron parameters and configuration was studied. Main parameters determining this energy are plasma potential, substrate ion current density, substrate bias and deposition rate. It was shown, that energetic conditions sufficiently influence on the structure formation of textured coatings. The influence of discharge gap distance and substrate bias potential on formation of hafnium diboride films structure was studied.
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页数：7
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