Characterization of PZT Ferroelectric Thin Films by RF-magnetron Sputtering

By using Radio Frequency (RF) magnetron sputtering method, Pb(Zr0.5Ti0.5)O-3 (PZT) thin films were deposited on Pt/Ti/SiO2/Si substrates. Pt/Ti bottom electrode was fabricated on SiO2/Si substrates by magnetron dual-facing-target sputtering system. Phase and crystalline structure analyses of the PZT films were performed on an X-ray diffraction(XRD), Surface morphology, roughness and particle size of the PZT films were observed with MMAFM/STM+ D3100 atomic force microscopy (AFM). Experiment results show that after annealing at 700 degrees C for 20 min, the thickness of PZT films can get perovskite structure. The surface of PZT thin films was uniform and density. Raw mean, Root Mean Square roughness and Mean roughness of PZT thin films is 34.357nm, 2.479nm and 1.954nm respectively. As test frequency was 1kHz, dielectric constant (epsilon) of PZT thin films was 327.6, electric hysteresis loop showed that coercive field (Ec), remanent polarization (Pr) and spontaneous polarization(Ps) of PZT thin films were 79.14 kV/cm, 37.78 mu C/cm(2) and 19.10 mu C/cm(2), respectively.