Numerical Simulations of Novel InGaN Solar Cells

被引：0
|
作者：
Brown, G. F. [1 ,2 ]
Ager, J. W., III [2 ]
Walukiewicz, W. [2 ]
Wu, J. [1 ,2 ]
机构：
[1] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
[2] Lawrence Berkeley Natl Lab, Div Sci Mat, Berkeley, CA 94720 USA
来源：
2009 34TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-3 | 2009年
基金：
美国国家科学基金会;
关键词：
BAND-GAP; INN;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Finite element simulations of novel InGaN solar cells, requiring no p-type InGaN, were carried out using the commercial software package APSYS. Simulations show that efficient, compositionally graded p-GaN/nInsGal-.N solar cells can be achieved, provided the graded layer is confined within the depletion region. These compositionally graded solar cells can be used as the top cell in an InGaN/Si double-junction cell to achieve AM 1.5 efficiencies over 27% using realistic material parameters.
引用
收藏
页码：1092 / +
页数：2
相关论文
共 50 条
  • [1] Simulations, Practical Limitations, and Novel Growth Technology for InGaN-Based Solar Cells
    Fabien, Chloe A. M.
    Moseley, Michael
    Gunning, Brendan
    Doolittle, W. Alan
    Fischer, Alec M.
    Wei, Yong O.
    Ponce, Fernando A.
    IEEE JOURNAL OF PHOTOVOLTAICS, 2014, 4 (02): : 601 - 606
  • [2] Finite element simulations of compositionally graded InGaN solar cells
    Brown, G. F.
    Ager, J. W., III
    Walukiewicz, W.
    Wu, J.
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2010, 94 (03) : 478 - 483
  • [3] Numerical study of InGaN tandem solar cells with intermediate bands
    Chen, Kuo-Feng
    Hung, Chien-Lun
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2017, 11 (02):
  • [4] Numerical investigation on the structural characteristics of GaN/InGaN solar cells
    Kuo, Yen-Kuang
    Chang, Jih-Yuan
    Yen, Shih-Hsun
    PHYSICS, SIMULATION, AND PHOTONIC ENGINEERING OF PHOTOVOLTAIC DEVICES II, 2013, 8620
  • [5] Numerical simulation of InGaN Schottky solar cell
    Hamady, Sidi Ould Saad
    Adaine, Abdoulwahab
    Fressengeas, Nicolas
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2016, 41 : 219 - 225
  • [6] Optimization of InGaN Laser Diodes Based on Numerical Simulations
    Sakowski, K.
    Strak, P.
    Krukowski, S.
    Marcinkowski, L.
    ACTA PHYSICA POLONICA A, 2016, 129 (1A) : A33 - A35
  • [7] Comparative analysis between numerical simulation of PPV/PCBM and InGaN based solar cells
    Iqbal, Mohammad Asif
    Gupta, Sunil Kumar
    MATERIALS TODAY-PROCEEDINGS, 2020, 30 : 168 - 173
  • [8] Numerical Modeling of the Electronic and Electrical Characteristics of InGaN/GaN-MQW Solar Cells
    Chouchen, Bilel
    Gazzah, Mohamed Hichem
    Bajahzar, Abdullah
    Belmabrouk, Hafedh
    MATERIALS, 2019, 12 (08)
  • [9] Numerical Simulations of solar flares
    Yokoyama, T
    Shibata, K
    HIGHLY ENERGETIC PHYSICAL PROCESSES AND MECHANISMS FOR EMISSION FROM ASTROPHYSICAL PLASMAS, 2000, (195): : 445 - 446
  • [10] Numerical simulations of solar macrospicules
    Murawski, K.
    Srivastava, A. K.
    Zaqarashvili, T. V.
    ASTRONOMY & ASTROPHYSICS, 2011, 535
12345